Semiconductor Lead Terminal Bending for Creepage Distance Control
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Solution Overview
Problem
Semiconductor devices used in high-power applications face challenges in maintaining adequate spatial and creepage distances between lead terminals without increasing device size, as the bent parts of lead terminals can bulge, reducing these distances.
Innovation Solution
A manufacturing method for semiconductor devices that includes forming slits in the tie bar part between lead terminals to which high voltage is applied, preventing the bent parts from protruding on adjacent terminals, thereby maintaining spatial and creepage distances, and using wide-bandgap semiconductors for high-voltage elements to reduce size and improve efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the terminal pitch is increased to ensure spatial distance and creepage distance between lead terminals, then the safety distance is improved, but the semiconductor device becomes extra large
Solution Approach 1:
The patent applies different structural characteristics to different regions of the lead terminal. Specifically, the lead terminal has a bent part with controlled protrusion in regions where high voltage is applied, while maintaining normal structure in other regions. This local differentiation allows the device to maintain adequate creepage distances in critical areas without unnecessarily increasing the overall device size.
Solution Approach 2:
The patent preemptively addresses the potential protrusion of bent parts by designing the lead terminal structure to control where and how the bent part forms. By预先 (in advance) determining the bent part's position and limiting its protrusion, the design prevents the reduction of spatial distances that would otherwise occur during the bending process, thereby maintaining required creepage distances without needing to increase the terminal pitch.
2Reliability
If the lead terminal is bent to connect to the semiconductor element, then the electrical connection is improved, but the bent part protrudes and decreases the distance between lead terminals
Solution Approach 1:
The patent applies different structural characteristics to different regions of the lead terminal. Specifically, the lead terminal has a bent part with controlled protrusion in regions where high voltage is applied, while maintaining normal structure in other regions. This local differentiation allows the device to maintain adequate creepage distances in critical areas without unnecessarily increasing the overall device size.
Solution Approach 2:
The patent preemptively addresses the potential protrusion of bent parts by designing the lead terminal structure to control where and how the bent part forms. By预先 (in advance) determining the bent part's position and limiting its protrusion, the design prevents the reduction of spatial distances that would otherwise occur during the bending process, thereby maintaining required creepage distances without needing to increase the terminal pitch.
Data Source
AI summary
A manufacturing method of a semiconductor device according to the technology disclosed in the present specification includes: providing at least one semiconductor element; connecting, to the semiconductor element, a plurality of first terminals and at least one second terminal that is a control terminal to which a voltage lower than that of the first terminal is applied; and forming a first bent part in the first terminal, in which the first bent part does not protrude on the surfaces, facing each other, of the plurality of first terminals that are adjacent to each other.