Leadframe Flip-Chip Interconnect With Plated Clip for High-Current Packaging
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Solution Overview
Problem
Traditional wire bonding methods for semiconductor power devices face limitations in handling high current densities, leading to complex manufacturing processes, increased costs, and reliability issues, which are exacerbated by clip bonding techniques.
Innovation Solution
A flip-chip packaging solution using a leadframe with vertical protrusions and a conductive film, allowing for direct electrical connections between the die terminals and pads, eliminating sequential clip bonding and soldering processes through parallel deposition of a conductive film, and enabling efficient singulation without additional lithography steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If clip bonding is used to handle high current densities, then electrical performance and heat distribution are improved, but manufacturing complexity and process time increase
Solution Approach 1:
The invention extracts and eliminates the complex clip bonding process (including solder application, pick-and-place, reflow, flux cleaning, and inspection steps) by replacing it with a simplified flip-chip interconnect approach using plated clips that are pre-integrated into the leadframe structure, thereby maintaining electrical performance while dramatically reducing manufacturing complexity
Solution Approach 2:
The invention introduces plated clips as intermediary elements that are pre-formed and integrated into the leadframe, serving as ready-made interconnect structures that eliminate the need for complex real-time clip bonding operations while maintaining the electrical and thermal performance benefits of clip bonding
2Reliability
If clip bonding is used to handle high current densities, then electrical performance is improved, but manufacturing cost increases
Solution Approach 1:
The invention applies preliminary action by pre-forming and pre-integrating the plated clips into the leadframe structure before die attachment, eliminating the need for costly real-time clip bonding operations including solder application, pick-and-place equipment, reflow processing, and flux cleaning, thereby significantly reducing manufacturing costs while maintaining electrical performance
3Reliability
If sequential clip bonding and soldering processes are used, then electrical connections are established, but manufacturing time and process steps increase
Solution Approach 1:
The invention merges the clip bonding and soldering processes into a single integrated flip-chip interconnect operation. The plated clips are pre-integrated into the leadframe structure, allowing die attachment to occur in one step without sequential processing, thereby establishing electrical connections while dramatically reducing manufacturing time and process steps
4Reliability
If traditional wire bonding or clip bonding is used, then electrical connections are established, but thermal dissipation performance is limited
Solution Approach 1:
The invention employs composite material structures where plated clips with high thermal and electrical conductivity are integrated into the leadframe, creating a hybrid interconnect system that combines the advantages of both wire bonding (flexibility) and clip bonding (thermal performance), thereby establishing reliable electrical connections while significantly improving thermal dissipation performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies manufacturing, reduces costs, and enhances reliability by providing superior thermal dissipation and electrical performance, suitable for high-power semiconductor devices.
Implementation Method 1
a conductive film (102) on the top side of the semiconductor device (100). The conductive film (102) may be a sputtered or plated interconnect film forming a lateral electrical contact on the top side of the semiconductor device (100)
Implementation Method 2
The conductive film (102) may be a sputtered or plated interconnect film forming a lateral electrical contact on the top side of the semiconductor device (100)
Data Source
AI summary
A semiconductor device and manufacturing method thereof are presented. The device has a top side and a bottom side and includes a leadframe with pads extending to the bottom side of and exterior to the device. At least one of the pads includes a leadframe vertical protrusion extending from the bottom side to the top side. A die is flip-chip arranged in the semiconductor device and includes terminals. At least one of the terminals on the top side of the die and facing the bottom side of the device is electrically connected to a corresponding pad. Another one of the terminals on the bottom side of the die faces the top side of the device where a conductive film electrically connects the terminal to the leadframe vertical protrusion at the top side.