Semiconductor Leadframe Layout for Compact High-Voltage Insulation
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Solution Overview
Problem
Conventional semiconductor devices for inverter systems in electric vehicles face challenges in maintaining sufficient dielectric strength between components with different power supply voltages, leading to potential dielectric breakdown due to insulation distance limitations.
Innovation Solution
The semiconductor device design incorporates a conductive support with specific lead and wire configurations, along with a sealing resin, to ensure distances between components exceed calculated minimum insulation distances (d0), thereby enhancing dielectric strength and preventing breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If insulation distance between components with different power supply voltages is reduced, then device size is decreased, but dielectric strength is insufficient leading to potential dielectric breakdown
Solution Approach 1:
The patent transitions from planar insulation distance measurement to three-dimensional spatial distance measurement. By calculating insulation distance considering vertical thickness dimensions in addition to horizontal layout, the patent achieves sufficient dielectric strength while reducing overall device footprint. The insulation distance calculation includes contributions from insulating layer thickness and horizontal spacing, effectively utilizing the third dimension to resolve the contradiction between compact size and adequate insulation.
2Reliability
If insulation distance between components with different power supply voltages is increased, then dielectric strength is improved, but device size increases
Solution Approach 1:
The patent changes the parameter of insulation distance from a simple horizontal measurement to a composite parameter that includes both horizontal distance and vertical thickness components. This parameter transformation allows the system to achieve equivalent or superior dielectric strength with reduced overall dimensions by optimizing the distribution of insulation across multiple spatial dimensions rather than uniformly increasing all distances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents dielectric breakdown by ensuring sufficient dielectric strength between components, allowing for reliable operation under varying voltage conditions.
Implementation Method 1
An insulating element is provided as a means for signal transmission between a plurality of elements with different power supply voltages
Data Source
AI summary
A semiconductor device includes first and second semiconductor elements, a conductive support, a third semiconductor element and a sealing resin. The conductive support includes first and second leads spaced apart in a first direction. The first semiconductor element is supported by the first lead. The second semiconductor element is supported by the second lead. The third semiconductor element, supported by the conductive support, insulates the first semiconductor element and the second semiconductor element. The sealing resin covers a part of the conductive support. A distance d1 between the first lead and the second lead in the first direction is greater than distance d0 given by Equation below. In Equation below, Y is the number of years of insulation life (years) expected for the semiconductor device, A and B are constants determined by a material of the sealing resin, and X is a voltage (kVrms).d0=YAB×0.15×X