Leadframe Vertical Interconnect FO-WLCSP

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Solution Overview

Problem

The formation of conductive vias in fan-out wafer level chip scale packages (FO-WLCSPs) increases manufacturing time and costs while reducing reliability due to the propensity for defects in vertical electrical interconnects.

Innovation Solution

The use of a leadframe disposed between the semiconductor die to form a vertical interconnect, eliminating the need for conductive vias and improving manufacturing efficiency and reliability by providing a direct electrical connection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conductive vias are formed through the encapsulant for vertical electrical interconnect, then electrical connection between topside and bottom side build-up interconnect structures is achieved, but manufacturing time increases and reliability decreases due to defects in via formation

Engineering Contradiction:
Improveinterconnect reliabilityVSAvoidmanufacturing cycle time
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent removes the problematic conductive via formation step from the manufacturing process. Instead of forming vias through the encapsulant, the invention uses an embedded leadframe structure that provides vertical interconnect pathways during the molding process itself, eliminating the subsequent via drilling, cleaning, and filling operations that consume time and introduce defects

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The leadframe is pre-positioned and embedded in the encapsulant during the molding process before other components are assembled. This preliminary action creates the vertical interconnect pathways in advance, eliminating the need for later via formation steps and enabling direct electrical connection between interconnect structures

Inventive Principle:
Principle #10Preliminary action

2Reliability

If conductive vias are formed through the encapsulant, then vertical electrical interconnect is achieved, but manufacturing costs increase due to additional process steps

Engineering Contradiction:
Improveinterconnect qualityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent extracts the via formation operations from the manufacturing sequence, removing the costly steps of drilling, cleaning, and filling conductive vias. The leadframe-based approach provides the same vertical interconnect function through a simpler, more cost-effective process that integrates into the molding operation

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The leadframe serves as a temporary but effective solution during manufacturing - it provides the necessary vertical interconnect pathways during assembly and can be easily integrated into the encapsulant structure, replacing expensive and complex via formation processes with a more economical approach

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Data Source

PatentUS9842808B2Semiconductor device and method of forming vertical interconnect in FO-WLCSP using leadframe disposed between semiconductor die
Publication Date: 2017.12.12 JCET SEMICON (SHAOXING) CO LTD
  • US9842808B2 patent drawing
  • US9842808B2 patent drawing
  • US9842808B2 patent drawing

AI summary

A semiconductor device has a plurality of semiconductor die or components mounted over a carrier. A leadframe is mounted over the carrier between the semiconductor die. The leadframe has a plate and bodies extending from the plate. The bodies of the leadframe are disposed around a perimeter of the semiconductor die. An encapsulant is deposited over the carrier, leadframe, and semiconductor die. A plurality of conductive vias is formed through the encapsulant and electrically connected to the bodies of the leadframe and contact pads on the semiconductor die. An interconnect structure is formed over the encapsulant and electrically connected to the conductive vias. A first channel is formed through the interconnect structure, encapsulant, leadframe, and partially through the carrier. The carrier is removed to singulate the semiconductor die. A second channel is formed through the plate of the leadframe to physically separate the bodies of the leadframe.