Pre-Molded Leadframe Wettable Flanks for Precise Singulation

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Solution Overview

Problem

Current semiconductor manufacturing processes using pre-molded leadframes result in irregularly shaped wettable flanks and less precise singulation due to imperfections in the etching steps, leading to difficulties in soldering and device separation.

Innovation Solution

Modifying the etching process to achieve a flatter and more regular surface on connecting bars by forming the connection formations with an initial full thickness, then reducing it uniformly to create exposed wettable flanks, eliminating surface irregularities and material accumulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional two-step etching process is used, then wettable flanks are formed, but surface irregularities and material accumulation occur on connecting bars

Engineering Contradiction:
Improvesurface regularity of connecting barsVSAvoidsurface irregularities and material accumulation
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent changes the etching parameters by using a single etching step with controlled depth to reach approximately the middle of the connecting bar thickness, rather than conventional two-step etching. This parameter change eliminates surface irregularities and material accumulation while still forming wettable flanks on the leadframe terminals.

Inventive Principle:
Principle #35Parameter changes

2Strength

If connecting bars are present with full thickness, then structural support is maintained, but singulation precision is reduced due to irregular surfaces

Engineering Contradiction:
Improvestructural support of leadframeVSAvoidsingulation precision
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent applies partial etching action by etching the connecting bars to only approximately half their full thickness, rather than removing them completely or leaving them at full thickness. This partial removal maintains sufficient structural support while creating a flat, regular surface that enables precise singulation.

Inventive Principle:
Principle #16Partial or excessive action

3Quantity of substance

If irregular surfaces are present on connecting bars, then material accumulation occurs, but soldering quality is compromised

Engineering Contradiction:
Improvematerial uniformityVSAvoidsoldering quality
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent changes the etching depth parameter to reach approximately the middle of the connecting bar thickness, which eliminates material accumulation and creates uniform surfaces. This uniformity ensures proper solder wetting and high-quality solder joints without the defects caused by irregular surfaces.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20240178105A1Method of manufacturing substrates for semiconductor devices, corresponding product and semiconductor device
Publication Date: 2024.05.30 STMICROELECTRONICS SRL
  • US20240178105A1 patent drawing
  • US20240178105A1 patent drawing
  • US20240178105A1 patent drawing

AI summary

Electrically insulating material such as an epoxy resin is molded onto a sculptured, electrically conductive leadframe structure comprising a pattern of electrically conductive formations. The electrically insulating material penetrates into spaces between electrically conductive formations in the pattern of electrically conductive formations to provide a pre-molded leadframe structure configured to have at least one semiconductor die arranged thereon. The pre-molded leadframe structure has opposed first and second surfaces and a pre-molded leadframe thickness between the first surface and the second surface. The sculptured, electrically conductive leadframe structure comprises one or more connection formations connected with electrically conductive formations in the pattern of electrically conductive formations. The connection formation or formations have a first thickness equal to the thickness between the first surface and the second surface. The thickness of the connection formation or formations is reduced from the first thickness to a second, reduced uniform thickness with exposed wettable flanks formed in the electrically conductive formations facing the connection formation or formations with reduced thickness.