On-Chip Leakage Current Detector With Reference Voltage Trimming
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Solution Overview
Problem
Conventional methods for measuring bit line leakage current in non-volatile memories are slow and costly, requiring external test equipment and lengthy testing times, which hinders high-speed and accurate detection necessary for maintaining memory cell reliability and data retention.
Innovation Solution
A semiconductor leakage current detector with a voltage trimming function, utilizing a first and second analog switch, an integral capacitor, and a comparison unit to accurately determine if the measured current exceeds a reference current, allowing for high-speed and accurate detection of bit line leakage current while canceling variations and noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional external equipment is used to measure bit line leakage current, then measurement capability is provided, but testing time increases and costs increase
Solution Approach 1:
The patent integrates the leakage current measurement function directly into the semiconductor device by incorporating a detector circuit, integral capacitor, and comparison unit within the same chip. This merging of measurement functionality eliminates the need for separate external measurement equipment and enables high-speed on-chip testing, directly resolving the contradiction between measurement capability and testing time.
Solution Approach 2:
The semiconductor device performs self-measurement of its own bit line leakage current through the integrated detector circuit. The device uses its internal resources (integral capacitor, comparison unit, reference voltage source) to conduct the measurement without requiring external test equipment, thereby reducing both testing time and costs while maintaining measurement capability.
2Measurement precision
If conventional external equipment is used to measure bit line leakage current, then measurement capability is provided, but testing costs increase
Solution Approach 1:
By combining the measurement function with the semiconductor device itself, the patent eliminates the need for expensive external test equipment. The integrated detector circuit, integral capacitor, and comparison unit form a cost-effective measurement system that reduces testing costs while maintaining the ability to measure bit line leakage current accurately.
Solution Approach 2:
The semiconductor device becomes self-testing, using its own internal components to measure its leakage current. This self-service approach eliminates dependency on external test equipment, thereby reducing testing costs while preserving measurement capability.
3Quantity of substance
If fine cell processing is used to increase storage capacity, then memory density increases, but bit line leakage current increases
Solution Approach 1:
The patent replaces conventional slow sense amplifier-based measurement with a faster, more precise detector circuit that can accurately measure and compensate for leakage current effects. This substitution enables effective leakage current management in fine-pitched memory cells, allowing high storage capacity to be maintained while controlling the harmful leakage effect through rapid detection and threshold-based verification.
4Productivity
If on-chip trimming of reference voltage is implemented, then measurement speed increases, but device complexity increases
Solution Approach 1:
The patent implements preliminary trimming of the reference voltage during the manufacturing process. By pre-adjusting the reference voltage to account for process variations, the detector circuit can operate at full speed without requiring complex real-time calibration mechanisms. This preliminary action reduces the need for complex control logic while maintaining high measurement speed and accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables fast and accurate measurement of bit line leakage current, reducing testing time and equipment costs by performing on-chip trimming of the reference voltage, thus enhancing memory cell reliability and data retention.
Implementation Method 1
an integral capacitor which is connected to the first analog switch and the second analog switch, and is charged with the current to be measured or the reference current
Data Source
AI summary
A semiconductor leakage current detector of the present invention includes a first analog switch which causes a current to be measured to flow or to be cut off, a second analog switch which causes a reference current to flow or to be cut off, an integral capacitance element which is connected by the first analog switch and the second analog switch and is charged with the current to be measured or the reference current, a discharge unit which discharges the integral capacitor, and a comparison unit which compares the reference voltage with each of an integral voltage generated in the integral capacitor by a reference current after the discharge of the integral capacitor and an integral voltage generated in the integral capacitance element by the current to be measured after the discharge of the integral capacitor.