LED Device with 3D Electron Cloud Structure for Current Spreading
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Solution Overview
Problem
Conventional light-emitting diode (LED) devices face inefficiencies due to current crowding effects caused by high contact resistance between semiconductor layers and metal electrodes, limiting light efficiency and requiring additional process steps that increase manufacturing costs and reduce quality.
Innovation Solution
Incorporating a three-dimensional electron cloud or hole cloud structure with wide and narrow bandgap material layers, specifically using group III and V nitride compounds, to enhance carrier mobility and concentration, allowing for uniform current distribution to the active layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If conventional techniques (window layer, current blocking layer, transparent electrode layer) are used to spread current, then current spreading improves, but manufacturing complexity and cost increase
Solution Approach 1:
The patent extracts the current spreading function from separate additional layers (window layer, current blocking layer, transparent electrode layer) and integrates it into the existing semiconductor layer structure through doping. This eliminates the need for separate current spreading layers while maintaining the current spreading effect, thereby reducing manufacturing complexity and cost.
Solution Approach 2:
The patent merges the current spreading function with the semiconductor layer by introducing doping regions directly into the semiconductor layer. This combines multiple functions (current conduction and current spreading) into a single layer structure, reducing the total number of layers and simplifying the manufacturing process.
2Loss of energy
If additional process steps are used to spread current, then light efficiency improves, but manufacturing cost increases
Solution Approach 1:
The patent extracts the current spreading function from separate additional layers and integrates it into the existing semiconductor layer through doping. This eliminates the need for separate current spreading layers while maintaining the current spreading effect, thereby reducing manufacturing cost while preserving light efficiency.
Solution Approach 2:
The patent changes the electrical parameters of the semiconductor layer by introducing doping regions with different doping concentrations. This modifies the current distribution characteristics within the semiconductor layer itself, achieving current spreading and improved light efficiency without adding extra layers or process steps.
3Loss of energy
If additional process steps are used to spread current, then light efficiency improves, but manufacturing yield decreases
Solution Approach 1:
The patent extracts the current spreading function from separate additional layers and integrates it into the existing semiconductor layer through doping. This eliminates the need for separate current spreading layers while maintaining the current spreading effect, thereby reducing manufacturing complexity and improving yield.
Solution Approach 2:
The patent merges the current spreading function with the semiconductor layer by introducing doping regions directly into the semiconductor layer. This combines multiple functions (current conduction and current spreading) into a single layer structure, reducing the total number of layers and simplifying the manufacturing process, which improves manufacturing yield.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves light efficiency while simplifying the manufacturing process, reducing current crowding effects and enhancing the overall performance of the LED device.
Implementation Method 1
Incorporating a three-dimensional electron cloud or hole cloud structure with wide and narrow bandgap material layers, specifically using group III and V nitride compounds, to enhance carrier mobility and concentration
Implementation Method 2
Incorporating a three-dimensional electron cloud or hole cloud structure with wide and narrow bandgap material layers
Implementation Method 3
The driving current R1 is driven from the front side electrode 105 to the p-type semiconductor layer 104, and through the active layer 103 having a double heterostructure or a multiquantum well to emit light
Data Source
AI summary
A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.