LED Active Layer Layout for Uniform Small-Scale Light Emission

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Solution Overview

Problem

Existing light emitting diodes (LEDs) face challenges in improving light emission efficiency, particularly when fabricated at a small scale for display devices, due to the placement of the active layer within the semiconductor structure.

Innovation Solution

A light emitting element is designed with an active layer positioned between two semiconductor layers, where the active layer is centered within the emission stacked pattern, enhancing light emission efficiency by ensuring uniform light intensity from both ends.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the active layer is positioned closer to one end of the semiconductor structure, then the manufacturing process is simplified, but the light emission efficiency decreases due to non-uniform light intensity

Engineering Contradiction:
Improveease of manufactureVSAvoidlight emission efficiency
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent applies asymmetry by intentionally positioning the active layer at the center of the emission stacked pattern, creating a symmetric light emission structure. This central positioning ensures that light is emitted uniformly from both ends of the LED, resolving the contradiction between manufacturing simplicity and light emission efficiency. The asymmetric design choice (centering the active layer) optimizes the optical performance while maintaining a straightforward manufacturing process.

Inventive Principle:
Principle #4Asymmetry

2Loss of energy

If the active layer is positioned at the center of the emission stacked pattern, then the light emission efficiency is improved with uniform light intensity, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvelight emission efficiencyVSAvoidmanufacturing precision
Core Design Contradiction:
Loss of energyVSManufacturing precision

Solution Approach 1:

The patent employs preliminary action by pre-designing the active layer position to be at the center of the emission stacked pattern during the manufacturing process. This predetermined central positioning is incorporated into the growth process of the nitride-based semiconductor layers, allowing the structure to self-align and reducing the need for post-manufacturing adjustments. The preliminary design of the layered structure with the active layer at the center simplifies the overall manufacturing precision requirements while achieving uniform light emission.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The centered active layer configuration improves light emission efficiency, resulting in a more uniform and effective light output from small-scale LEDs used in display devices.

Implementation Method 1

an active layer, and a second conductive semiconductor layer that are sequentially stacked in one direction. The active layer includes a first surface that is in contact with the first conductive semiconductor layer in a longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentEP3929989B1Light-emitting element and display device including same
Publication Date: 2025.10.15 SAMSUNG DISPLAY CO LTD
  • EP3929989B1 patent drawingFigure 1A~1B
  • EP3929989B1 patent drawingFigure 2A~2B
  • EP3929989B1 patent drawingFigure 2C~2D

AI summary

A light emitting element may include an emission stacked pattern including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that are stacked in one direction. The active layer may include a first surface that is in contact with the first conductive semiconductor layer in a longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer. The first conductive semiconductor layer may include at least one n-type semiconductor layer, and the second conductive semiconductor layer may include at least one p-type semiconductor layer. Further, the first surface of the active layer may be located at a point corresponding to -20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern within the emission stacked pattern.