LED Active Layer Aid Structure for Carrier Overflow and Heat Loss
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Solution Overview
Problem
Light emitting diodes (LEDs) face challenges in radiation efficiency due to excessive heat energy consumption and carrier overflow phenomena, particularly in active layers with large energy band gaps, which reduce emission efficiency and stability of electrode connections.
Innovation Solution
A light emitting device with a structure comprising a first and second window layer doped with conductivity type dopants, an active layer with quantum barrier and well layers, and an aid layer with varying Al and Ga compositions, where the aid layer's energy band gap is between that of the quantum barrier and well layers, reducing heat dissipation and carrier overflow, and enhancing electrode reliability through a mesa structure over a thick window layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the energy band gap between the quantum well layer and the quantum barrier layer is increased to improve carrier confinement, then the radiation efficiency of the active layer is reduced due to excessive heat energy consumption
Solution Approach 1:
The patent introduces an intermediate layer with a band gap between 2.0 eV and 3.5 eV positioned between the quantum well layer and quantum barrier layer. This intermediate layer acts as a mediator that provides moderate carrier confinement while reducing the energy difference for carrier transitions, thereby decreasing heat generation and improving radiation efficiency.
Solution Approach 2:
The patent optimizes the band gap parameter of the intermediate layer to be within a specific range (2.0-3.5 eV), which is between the band gaps of the quantum well layer (lower) and quantum barrier layer (higher). This parameter optimization balances carrier confinement effectiveness with radiation efficiency, preventing excessive heat generation while maintaining stable carrier confinement.
2Loss of energy
If the energy band gap between the quantum well layer and the quantum barrier layer is decreased to reduce heat energy consumption, then the radiation efficiency of the active layer is reduced due to carrier overflow phenomenon
Solution Approach 1:
The intermediate layer serves as a mediator that prevents carrier overflow into the quantum barrier layer while maintaining a reasonable energy transition path. By positioning this layer with appropriate band gap characteristics between the quantum well and barrier layers, carriers are confined effectively without requiring excessive energy differences that would cause overflow.
Solution Approach 2:
The patent specifies that the intermediate layer's band gap should be within 2.0-3.5 eV, creating an optimal energy landscape that prevents carrier overflow. This parameter control ensures that the energy barrier is sufficient to confine carriers while avoiding the carrier overflow phenomenon that occurs when the band gap difference is too large.
3Reliability
If a thick window layer is used to improve electrode connection stability, then the device structure complexity increases
Solution Approach 1:
The patent divides the window layer into multiple distinct layers (first window layer and second window layer) with different doping types and characteristics. This segmentation allows each layer to perform specific functions - one layer optimized for electrode contact and another for light transmission - thereby achieving stable electrode connections while maintaining manageable structural complexity through functional specialization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves radiation efficiency by reducing heat energy consumption and preventing carrier overflow, while ensuring stable electrode connections, resulting in enhanced emission efficiency and reliability of the light emitting device.
Implementation Method 1
the light emitting diode is formed by growing epitaxial layers on a substrate, and includes an n-type semiconductor layer, a p-type semiconductor layer and an active layer interposed therebetween... light generated through recombination of electrons and holes in the active layer may be emitted
Implementation Method 2
A light emitting device according to an embodiment of the disclosed technology includes a first window layer doped with a first conductivity type dopant, a second window layer doped with a second conductivity type dopant
Data Source
AI summary
The disclosed technology discloses a light emitting device, which includes a first window layer doped with a first conductivity type dopant, a second window layer doped with a second conductivity type dopant, and an active layer disposed between the first window layer and the second window layer to generate light, in which the active layer includes at least two quantum barrier layers, at least one quantum well layer, and an aid layer disposed between the quantum well layer and the quantum barrier layer.