LED Barrier Layer Doping Profile for Voltage and Intensity
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Solution Overview
Problem
Current light emitting devices face challenges in reducing operating voltage while enhancing luminous intensity.
Innovation Solution
The light emitting device incorporates a structure with a first and second conductive semiconductor layer, an active layer with a barrier layer having un-doped and doped areas, and a window layer, which allows for efficient electron-hole recombination and light extraction, thereby reducing operating voltage and increasing luminous intensity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional light emitting device structures are used, then manufacturing is simpler, but operating voltage is high and luminous intensity is low
Solution Approach 1:
The barrier layer is divided into different doped areas (first doped area, second doped area, third doped area) with different doping concentrations. The first doped area has higher doping concentration than the second doped area, which in turn has higher doping concentration than the third doped area. This local quality variation optimizes carrier confinement and recombination efficiency at different locations, enhancing luminous intensity while managing voltage characteristics.
Solution Approach 2:
The patent changes the doping concentration parameter across different areas of the barrier layer. By varying the doping concentration from the first doped area (highest) to the second doped area (intermediate) to the third doped area (lowest), the device optimizes the balance between carrier injection efficiency and recombination efficiency, thereby improving luminous intensity while controlling operating voltage.
2Productivity
If uniform doped barrier layer is used, then structure is simpler, but electron mobility and light extraction efficiency are suboptimal
Solution Approach 1:
The barrier layer employs local quality variation through multiple doped areas with different doping concentrations. The first doped area (adjacent to active layer) has highest doping concentration for effective carrier injection, the second doped area has intermediate concentration for balanced performance, and the third doped area has lowest concentration for optimized light extraction. This spatially varying doping profile enhances both electron mobility and light extraction efficiency.
Solution Approach 2:
The barrier layer is segmented into distinct doped regions (first, second, and third doped areas) with progressively decreasing doping concentrations. This segmentation allows each region to perform its specific function optimally: the first region focuses on carrier injection, the second on transition, and the third on light extraction, thereby improving overall device productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the operating voltage and enhances luminous intensity by optimizing electron mobility and light extraction efficiency.
Implementation Method 1
The light emitting device converts electrical signals into a form of light such as infrared ray, visible ray and ultraviolet ray using characteristics of a compound semiconductor
Implementation Method 2
an active layer comprising a barrier layer which is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and which has an un-doped area and a doped area with dopants
Data Source
AI summary
Disclosed are a light emitting device, a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer comprising a barrier layer which is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and which has an un-doped area and a doped area with dopants.