LED Bonding Interface Structure for Mirror Flatness and Strength
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Solution Overview
Problem
Conventional metal bonding processes in LED manufacturing affect the flatness of the mirror reflection system, leading to reduced light reflection and extraction efficiency, necessitating an innovative structure that balances bonding strength with reflection performance.
Innovation Solution
A light emitting diode structure with a non-flat interface between the permanent substrate and the metal bonding layer, featuring a roughness of less than 0.5 micrometers, enhances bonding strength and maintains mirror reflection efficiency by using specific materials and processes to ensure flatness at the bonding interfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a flat bonding interface is used to ensure mirror reflection efficiency, then light extraction efficiency is improved, but bonding strength between LED chip and permanent substrate is reduced
Solution Approach 1:
The bonding interface is designed with non-uniform roughness characteristics: the region near the LED chip contact area maintains higher flatness (Ra < 0.05μm) to ensure mirror reflection efficiency and light extraction, while other regions of the bonding interface can have greater roughness to enhance bonding strength through increased surface area and mechanical interlocking
Solution Approach 2:
Instead of a perfectly flat bonding interface, the patent introduces controlled curvature and roughness features at the bonding interface between the permanent substrate and metal bonding layer. This curved/roughened interface increases the actual bonding surface area and creates mechanical interlocking effects, thereby enhancing bonding strength while maintaining adequate flatness in critical regions for optical performance
2Strength
If a non-flat bonding interface is used to enhance bonding strength, then bonding strength between LED chip and permanent substrate is improved, but flatness of mirror reflection system is affected and light extraction efficiency is reduced
Solution Approach 1:
The bonding interface is designed with non-uniform roughness characteristics: the region near the LED chip contact area maintains higher flatness (Ra < 0.05μm) to ensure mirror reflection efficiency and light extraction, while other regions of the bonding interface can have greater roughness to enhance bonding strength through increased surface area and mechanical interlocking
Solution Approach 2:
The bonding interface is segmented into different functional zones: a central flat region that contacts the LED chip and maintains optical performance, and peripheral regions with enhanced roughness that provide additional bonding strength. This segmentation allows each zone to optimize for its specific function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the yield of the metal bonding process and enhances light extraction efficiency while maintaining high bonding strength and reflection performance.
Implementation Method 1
The interface between the bonding metal composite layer and the permanent substrate is a non-flat surface, and the surface roughness (Ra) of the non-flat surface is less than 0.5 micrometers (μm)
Implementation Method 2
The substrate may contain some optical components, such as mirror reflection layers, which help to improve the reflection effect of light and increase the light extraction efficiency
Implementation Method 3
by bonding with a substrate with good heat dissipation efficiency, the LED chip and the cooling substrate are closely combined, which is helpful to effectively transfer the heat generated by the LED chip to the outside through the substrate
Data Source
AI summary
A light emitting diode structure is provided. The light emitting diode includes a permanent substrate, a bonding metal composite layer, a mirror composite layer and an epitaxial semiconductor composite layer. The bonding metal composite layer is disposed on the permanent substrate, the mirror composite layer is disposed on the bonding metal composite layer, and the epitaxial semiconductor composite layer is disposed on the mirror reflection composite layer. There is a non-flat surface between the bonding metal composite layer and the permanent substrate, and the surface roughness (Ra) of the non-flat surface is less than 0.5 microns (μm).