Light Emitting Device Bonding with Rare Gas Distribution

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Solution Overview

Problem

Current light emitting devices experience significant light loss at the bonding portion between the light emitting element and the wavelength conversion member, limiting their luminous intensity.

Innovation Solution

A light emitting device is developed with a bonding portion containing a rare gas element (He, Ne, or Kr) distributed away from the emission surface, using a surface activated bonding method to minimize light loss and enhance bonding strength, where the light emitting element and light transmissive member are bonded via a bonding portion with a peak rare gas element distribution positioned away from the emission surface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a surface activated bonding method is used to bond the light emitting element and wavelength conversion member, then manufacturing cost is reduced and bonding strength is improved, but light loss at the bonding portion increases

Engineering Contradiction:
Improvebonding strengthVSAvoidlight loss
Core Design Contradiction:
StrengthVSLoss of energy

Solution Approach 1:

The patent applies local quality by creating a non-uniform distribution of rare gas elements within the bonding portion. The rare gas element concentration varies spatially, with higher concentration at specific depths away from the emission surface, optimizing both bonding strength and light transmission properties at different locations within the bonding interface.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the physical and chemical parameters of the bonding portion by introducing rare gas elements (He, Ne, Ar, Kr, or Xe) at controlled concentrations and depth distributions. This modifies the optical and mechanical properties of the bonding interface, reducing light absorption while maintaining bonding strength.

Inventive Principle:
Principle #35Parameter changes

2Loss of energy

If the rare gas element is distributed with high density at deeper positions from the bonding surface, then light scattering is reduced, but bonding strength may be compromised

Engineering Contradiction:
Improvelight scatteringVSAvoidbonding strength
Core Design Contradiction:
Loss of energyVSStrength

Solution Approach 1:

The patent applies local quality by creating a non-uniform distribution of rare gas elements within the bonding portion. The rare gas element concentration varies spatially, with higher concentration at specific depths away from the emission surface, optimizing both bonding strength and light transmission properties at different locations within the bonding interface.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent addresses the trade-off by introducing a depth dimension to the rare gas element distribution. Instead of uniform distribution, the rare gas elements are positioned at specific depths within the bonding portion, creating a three-dimensional concentration profile that simultaneously optimizes optical transmission and mechanical bonding properties.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces light scattering and absorption, increasing light extraction efficiency and maintaining high bonding strength even under thermal stress, thereby achieving less light loss and improved luminous intensity.

Implementation Method 1

activating a first surface, which activates a first bonding surface of the light emitting element to which the light transmissive member is to be bonded by irradiating with an ion beam of at least one rare gas element selected from the group consisting of He, Ne, Ar, and Kr

Methodology Applied
Scientific EffectIon beam irradiation: Ion Beam

Data Source

PatentUS11735688B2Method of manufacturing light emitting device
Publication Date: 2023.08.22 NICHIA CORP
  • US11735688B2 patent drawing
  • US11735688B2 patent drawing
  • US11735688B2 patent drawing

AI summary

A method of manufacturing a light emitting device includes: bonding a light emitting element and a light transmissive member by a surface activated bonding method, which includes: activating a first bonding surface of the light emitting element to which the light transmissive member is to be bonded, by irradiating at least the first bonding surface with an ion beam, activating a second bonding surface of the light transmissive member to which the light emitting element is to be bonded, by irradiating at least the second bonding surface with an ion beam, and joining the light emitting element and the light transmissive member by bringing the activated first bonding surface and the activated second bonding surface into contact.