Transparent Bonding Structure Slits for LED Interface Reliability
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Solution Overview
Problem
Existing light-emitting diode (LED) manufacturing processes often experience unexpected cracking and delamination at the interface between the epitaxial structure and the transparent oxide material during the annealing process, due to thermal mismatch, which affects the reliability of the LEDs.
Innovation Solution
A light-emitting device is manufactured with a transparent bonding structure that includes a slit extending from one bonding surface toward the opposite bonding surface, reducing internal stress in the transparent oxide material and thereby minimizing cracking and delamination during the annealing process. This is achieved by forming a roughened surface on the epitaxial structure and bonding it to a semiconductor substrate using a transparent bonding structure with a slit, which is formed through chemical or physical deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a transparent oxide material bonding layer is used to bond the epitaxial structure to the substrate, then bonding strength is improved, but internal stress accumulates during annealing causing cracking and delamination
Solution Approach 1:
The bonding layer is segmented by introducing slits that divide the continuous oxide material into separate regions. These slits act as stress release zones that prevent stress accumulation and propagation, thereby preventing cracking and delamination while maintaining bonding strength in the intact regions.
Solution Approach 2:
The physical structure of the bonding layer is changed by introducing slits with specific dimensions (depth, width, spacing). This parameter modification allows the bonding layer to accommodate thermal stress during annealing by providing controlled stress release paths, preventing catastrophic failure while maintaining bonding functionality.
2Area of stationary object
If the transparent bonding structure is made continuous to ensure uniform bonding, then bonding coverage is improved, but stress concentration occurs leading to cracking
Solution Approach 1:
The continuous bonding layer is segmented into discrete bonded regions separated by slits. This segmentation maintains adequate bonding coverage area through the distributed bonded regions while preventing stress concentration by interrupting the continuous stress transmission path through the bonding layer.
3Manufacturing precision
If annealing temperature is increased to improve material densification, then material quality is improved, but thermal mismatch stress increases causing delamination
Solution Approach 1:
The bonding layer structure is changed by introducing slits that modify its mechanical properties. This structural parameter change allows the bonding layer to withstand higher annealing temperatures by providing stress release mechanisms, enabling material densification without catastrophic stress-induced failure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The inclusion of a slit in the transparent bonding structure effectively reduces internal stress, preventing cracking and delamination at the interface between the epitaxial structure and the bonding layer, thereby enhancing the reliability and yield of the light-emitting device.
Implementation Method 1
roughening a surface of the epitaxial structure that is distal from the growth substrate so as to form a roughened first surface of the epitaxial structure
Implementation Method 2
The light-emitting device according to the present disclosure may have reduced internal stress in the transparent oxide material of the bonding structure by providing a slit in the transparent bonding structure, which effectively reduces cracking and delamination at an interface between the epitaxial structure and the transparent bonding structure caused by thermal mismatch during an annealing process
Implementation Method 3
during an annealing process in the manufacturing of the LEDs, unexpected cracking and delamination may occur at an interface between the epitaxial structure and the transparent oxide material
Implementation Method 4
cracking and delamination at an interface between the epitaxial structure and the transparent oxide material caused by thermal mismatch during an annealing process
Data Source
AI summary
A light-emitting device includes a semiconductor substrate, an epitaxial structure that has a first surface facing the semiconductor substrate and a second surface opposite to the first surface, and a transparent bonding structure that is disposed between the first surface and the semiconductor substrate. The transparent bonding structure has a first bonding surface facing the first surface of the epitaxial structure and a second bonding surface opposite to the first bonding surface, and has a slit extending from the first bonding surface toward the second bonding surface and terminating at a position that is a distance away from the second bonding surface. A method for manufacturing a light-emitting device is also provided.