LED Chip Contact Layout for Current Spreading and Light Extraction
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Solution Overview
Problem
Conventional LED chip structures face challenges in maximizing light emission efficiency due to internal reflection and current injection issues, particularly for larger area LEDs, where current spreading and thermal management are compromised by closely spaced electrically charged metals of opposing polarities.
Innovation Solution
The LED chip structure incorporates vertically arranged n-contact interconnects under or proximate to p-contacts, along with segmented contact structures and reflective layers, to route electrically conductive paths effectively while reducing instances of closely spaced opposing polarities, enhancing current spreading and injection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If n-contact interconnects are vertically arranged under or proximate to p-contact to improve current spreading, then light extraction efficiency is improved, but risk of electromigration between closely spaced opposing polarities increases
Solution Approach 1:
An electrically isolated metal-containing layer is introduced as an intermediary between the n-contact interconnects and p-contact. This intermediate layer provides physical separation and electrical isolation, allowing the n-contact interconnects to be positioned vertically under or proximate to the p-contact for improved current spreading, while preventing direct electrical contact that would cause electromigration between oppositely charged metals of opposing polarities.
2Ease of operation
If larger surface area electrodes are used to improve current distribution, then current spreading is enhanced, but device complexity increases
Solution Approach 1:
The electrode structure is segmented into multiple functional components: p-contact, n-contact, multiple n-contact interconnects, and an electrically isolated metal-containing layer. This segmentation allows each component to perform its specific function efficiently while maintaining overall current distribution. The isolated metal layer acts as a segmented barrier that simplifies the routing of n-contact interconnects beneath the p-contact without requiring complex three-dimensional electrode arrangements.
Data Source
AI summary
Light-emitting diodes (LEDs) and more particularly LED chip structures are disclosed. LED chip structures include arrangements of one or more contacts, interconnects, contact structures, and/or reflective layers that effectively route electrically conductive paths while also reducing instances of closely spaced electrically charged metals of opposing polarities. Certain LED chip structures include electrically isolated metal-containing layers in various chip locations that allow for the presence of n-contact interconnects that are vertically arranged under or proximate to a p-contact. Certain contact structures include various arrangements, including segmented contact structures, that extend laterally to electrically couple groups of n-contact interconnects across various LED chip portions.