LED Chip Continuous Frame Electrode for Uniform Light Emission

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Solution Overview

Problem

Conventional light-emitting diode (LED) structures with penetrating electrodes reduce the effective light-emitting area and lead to uneven light emission, resulting in lower luminous efficiency.

Innovation Solution

A light-emitting chip design featuring a conductive carrier, semiconductor layers, and a continuous electrode structure with a frame and strip structure that extends into the chip, allowing for improved current spreading and reduced electrode area, thereby enhancing light-emitting efficiency and uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If multiple penetrating electrodes are used to connect the N-type semiconductor layer and negative electrode, then the voltage required for the N-type semiconductor layer can be supplied, but the effective light-emitting area is reduced and light emission becomes uneven

Engineering Contradiction:
Improvevoltage supply capabilityVSAvoideffective light-emitting area
Core Design Contradiction:
Ease of operationVSArea of stationary object

Solution Approach 1:

The patent segments the electrode structure into a frame-shaped electrode at the edge region and a bottom layer electrode in the interior region. This segmentation allows the electrode to connect the N-type semiconductor layer and negative electrode effectively while minimizing the coverage area on the light-emitting surface, thus resolving the contradiction between voltage supply capability and effective light-emitting area.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent moves the electrode structure from a planar configuration to a three-dimensional configuration by creating a frame-shaped electrode at the edge region and a bottom layer electrode in the interior region. This dimensional change allows the electrode to maintain electrical connectivity while reducing its footprint on the light-emitting surface, thereby increasing the effective light-emitting area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of operation

If multiple penetrating electrodes are used to connect the N-type semiconductor layer and negative electrode, then the voltage required for the N-type semiconductor layer can be supplied, but the light emission at the edges becomes uneven

Engineering Contradiction:
Improvevoltage supply capabilityVSAvoidlight emission uniformity
Core Design Contradiction:
Ease of operationVSIllumination intensity

Solution Approach 1:

The patent segments the electrode structure into a frame-shaped electrode at the edge region and a bottom layer electrode in the interior region. This segmentation ensures uniform current distribution across the light-emitting surface, as the frame-shaped electrode at the edge region prevents current concentration at the boundaries, thereby achieving uniform light emission while maintaining voltage supply capability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different electrode configurations to different regions: a frame-shaped electrode at the edge region and a bottom layer electrode in the interior region. This local differentiation optimizes current distribution, ensuring uniform light emission across the entire light-emitting surface while maintaining effective voltage supply to the N-type semiconductor layer.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If the surface of the N-type semiconductor layer directly serves as the light-emitting surface with no electrode, then electrode interference with phosphor powder coating is avoided, but the effective light-emitting area is reduced due to penetrating electrodes

Engineering Contradiction:
Improvephosphor powder coatingVSAvoideffective light-emitting area
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The patent segments the electrode structure into a frame-shaped electrode at the edge region and a bottom layer electrode in the interior region. This segmentation minimizes the electrode's presence on the light-emitting surface, allowing phosphor powder to be coated uniformly without electrode interference while maintaining effective electrical connectivity, thus resolving the contradiction between ease of manufacture and effective light-emitting area.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent moves the electrode structure to the edge region and interior region, away from the central light-emitting surface. This spatial repositioning allows the phosphor powder to be coated on the light-emitting surface without interference from penetrating electrodes, while the electrode structure maintains its voltage supply function through the frame-shaped and bottom layer configurations.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design increases the light-emitting area and improves current spreading, resulting in higher luminous efficiency and more uniform light emission compared to traditional LED structures.

Implementation Method 1

LED is a luminescent light-emitting element whose principle of luminescence is to apply a forward bias (current) on a III-V compound semiconductor material, and combines electrons and holes in a dipole to convert energy into light

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS10930831B2Light emitting chip and fabrication method thereof
Publication Date: 2021.02.23 HIGH POWER OPTO
  • US10930831B2 patent drawing
  • US10930831B2 patent drawing
  • US10930831B2 patent drawing

AI summary

The invention provides a light emitting chip comprising a conductive carrier, a semiconductor layer body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer, wherein the semiconductor layer has a concave part extending from the surface of the first semiconductor layer through the radiation emitting layer toward the second semiconductor layer; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the conductive carrier, wherein the second electrical connection layer includes a continuous electrode structure connected to the second semiconductor layer, the continuous electrode structure being constituted by at least a frame structure distributed at the edge of the light emitting chip; and a second electrode electrically connected to the conductive carrier.