LED Chip with Integrated Protective PN Junction
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Solution Overview
Problem
Existing light-emitting diodes (LEDs) face challenges in maintaining stability and size due to the need for additional electronic components like Zener diodes and capacitors to enhance breakdown voltage, which increases size and manufacturing costs, and require additional electrodes for protective diodes, complicating the manufacturing process.
Innovation Solution
A light-emitting diode with a second pn junction structure formed on a silicon single crystal substrate, using a conductive type silicon single crystal substrate and a second conductive type semiconductor layer, along with an intermediate layer, to improve breakdown voltage without the need for additional protective diodes or electrodes, thereby reducing size and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional electronic components (Zener diode, capacitor) are added to improve breakdown voltage property, then the reliability is improved, but the device complexity increases
Solution Approach 1:
The patent merges the protective function against reverse overcurrent directly into the LED chip structure by forming a second pn junction structure within the same semiconductor substrate. This integration eliminates the need for separate Zener diodes and capacitors, thereby improving reliability while reducing device complexity and eliminating additional circuit assembly steps
Solution Approach 2:
The semiconductor layer serves multiple functions: it acts as both the light-emitting active region and the protective element against reverse overcurrent through the second pn junction structure. This multi-functionality allows a single component to provide both optical output and electrical protection, reducing the need for additional specialized components
2Reliability
If protective diode is provided separately and electrically connected in parallel, then the reliability is improved, but the area increases
Solution Approach 1:
The protective pn junction structure is merged into the same chip substrate as the light-emitting section, sharing the same semiconductor material and physical space. This integration allows the protective function to be achieved without increasing the overall chip area, as both functions coexist within the same device footprint
Solution Approach 2:
The second pn junction structure is nested within the same semiconductor substrate that contains the light-emitting pn junction. By nesting the protective structure within the existing chip architecture rather than adding it as a separate external component, the patent achieves protection functionality without increasing chip area
3Reliability
If protective diode is provided separately with additional electrodes, then the reliability is improved, but the device complexity increases
Solution Approach 1:
The patent combines the protective pn junction structure with the light-emitting section such that they share common electrodes and electrical connections. This merging eliminates the need for additional separate electrodes and connection terminals that would be required for an externally mounted protective diode, thereby simplifying the manufacturing process while maintaining protection functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively enhances the reverse breakdown voltage property within the same LED chip, preventing overcurrent from static electricity and reducing the LED's size and manufacturing complexity by eliminating the need for external protective diodes and additional electrodes.
Implementation Method 1
a light-emitting section including a first pn junction structure composed of a III-group nitride semiconductor on the silicon single crystal substrate
Implementation Method 2
improve a break-down voltage property of a light-emitting diode by providing a pn junction type light-emitting section and a pn junction type protective diode in the same chip
Data Source
AI summary
The present invention provides a light-emitting diode (10) including a substrate (101) made of a first conductive type silicon (Si) single crystal, a pn junction structured light-emitting section (40) composed of a III-group nitride semiconductor on the substrate, a first polarity ohmic electrode (107a) for the first conductive type semiconductor provided on the light-emitting section (40) and a second polarity ohmic electrode (108) for a second conductive type semiconductor on the same side as the light-emitting section (40) with respect to the substrate (101), wherein a second pn junction structure (30) is provided which is made up of a pn junction between the first conductive type semiconductor layer (102) and the second conductive type semiconductor layer (103) which is different from the pn junction structure of the light-emitting section (10).