Selective LED Chip Release Using Localized Laser Spot Coverage
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Solution Overview
Problem
Conventional methods for selectively releasing light-emitting diode (LED) chips lack precision and efficiency in separating them from substrates, which is crucial for manufacturing high-resolution LED display devices.
Innovation Solution
A method involving the application of a laser spot, generated from a laser energy source, is used to reduce the bonding force between the LED chip and the substrate, with the laser spot covering the p-type and n-type electrodes, and potentially the central portion, ensuring a precise and quick release by maintaining a coverage length less than the pitch between chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a laser spot is applied to release LED chips from substrate, then the bonding force is reduced and chips can be separated, but the precision and efficiency of selective release is insufficient
Solution Approach 1:
The patent applies local quality by using a laser spot with specific coverage characteristics that targets only the bonding regions (electrodes) of the selected LED chip while avoiding adjacent chips. The laser spot coverage is designed to cover the p-type and n-type electrodes of the target chip, creating localized heating that reduces bonding force only at the intended release location, thereby achieving precise selective release without affecting neighboring chips.
Solution Approach 2:
The patent utilizes parameter changes by controlling the laser spot coverage length to be less than the pitch between adjacent chips. This parameter control ensures that the laser energy is concentrated on the bonding regions of the selected chip, changing the thermal parameters locally to reduce bonding force efficiently. The coverage length parameter is optimized to balance between covering all bonding regions of the target chip and avoiding adjacent chips, thus resolving the contradiction between precision and efficiency.
2Reliability
If laser spot coverage is increased to ensure complete release of LED chip, then release completeness is improved, but risk of affecting adjacent chips increases
Solution Approach 1:
The patent applies local quality by designing the laser spot coverage to match the spatial distribution of bonding regions on the LED chip. The coverage is configured to cover the p-type and n-type electrodes which are the actual bonding locations, rather than uniformly covering the entire chip area. This localized approach ensures complete release of the target chip while minimizing energy exposure to adjacent chips, thus improving reliability without causing harmful effects to neighboring components.
Solution Approach 2:
The patent applies partial action by using a laser spot coverage that is sufficient to cover all bonding regions of the selected chip but deliberately kept less than the pitch to adjacent chips. This partial coverage strategy ensures that the laser energy is applied exactly where needed (at the bonding electrodes) without excessive extension that would affect adjacent chips, thereby achieving complete release of the target chip while preventing damage to neighbors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the precise and efficient release of LED chips, enhancing the manufacturing process by allowing for quick and accurate separation during production and repair, thereby improving the overall efficiency of LED device manufacturing.
Implementation Method 1
applying a laser spot generated from a laser energy source to reduce a bonding force between the selected light-emitting diode chip and the first substrate
Data Source
AI summary
A method of releasing a selected light-emitting diode chip from a plurality of light-emitting diode chips each of which has a p-type electrode, an n-type electrode and a central portion between the p-type electrode and the n-type electrode, comprising steps of: providing a first substrate with the plurality of light-emitting diode chips bonded thereon and spaced from each other in a pitch; and applying a laser spot generated from a laser energy source to reduce a bonding force between the selected light-emitting diode chip and the first substrate, thereby making the selected light-emitting diode chip release from the first substrate; wherein the laser spot has a coverage over the p-type electrode and the n-type electrode of the selected light-emitting diode chip, and the coverage has a length less than the pitch.