LED Chip Separation Using Sacrificial Layer and Patterned Metal Bonding
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Solution Overview
Problem
Conventional LED chip manufacturing methods result in byproducts due to laser-cutting limitations, leading to current leakage and reduced utilization efficiency of the light-emitting stack, necessitating wide cutting trenches that could be optimized for increased area usage.
Innovation Solution
A method involving semiconductor stacked blocks with conductive-type layers and a light-emitting layer, where the blocks are separated using a sacrificial layer and patterned metal layers for bonding, allowing for narrower trenches and improved area utilization by minimizing byproducts and current leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If laser-cutting is used to separate the light-emitting stack, then the light-emitting stack can be divided into multiple LED chips, but byproducts are generated causing current leakage
Solution Approach 1:
A sacrificial layer is introduced as an intermediary substance between the light-emitting stack and the substrate. This sacrificial layer enables clean separation without direct laser contact to the stack, preventing byproduct generation and current leakage while maintaining high production efficiency
Solution Approach 2:
The patent replaces the conventional laser-cutting method with a mechanical separation approach using a sacrificial layer. Instead of using laser energy to cut through the light-emitting stack, the process uses mechanical peeling of the sacrificial layer to separate the stack from the substrate, eliminating the harmful thermal effects of laser cutting
2Reliability
If wide cutting trenches are used to avoid current leakage, then reliability is improved, but the utilized area of the light-emitting stack decreases
Solution Approach 1:
The sacrificial layer acts as a mediator that enables separation without requiring wide trenches. By peeling away the sacrificial layer, the light-emitting stack can be separated into narrow trenches that prevent current leakage while maximizing the utilized area of the stack
Solution Approach 2:
The patent changes the separation mechanism from direct mechanical or laser cutting to sacrificial layer peeling. This parameter change allows the trench width to be reduced from conventional wide dimensions to narrow dimensions that prevent current leakage while maximizing light-emitting stack utilization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables a 25% increase in the utilized area of the light-emitting stack by reducing trench width, enhancing the efficiency and effectiveness of LED chip production.
Implementation Method 1
conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate
Implementation Method 2
conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer
Data Source
AI summary
The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.