LED Chip Scattering Structure for Uniform Micro-LED Brightness
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Solution Overview
Problem
Micro and Mini light-emitting diodes (LEDs) suffer from poor light emission uniformity and low luminous brightness due to their small size, leading to issues with overall screen brightness and uneven display brightness in display devices.
Innovation Solution
An LED chip with an epitaxial structure featuring a stacked N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer, where the N-type semiconductor layer includes holes filled with scattering particles to scatter light waves, improving light emission uniformity and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the LED chip size is reduced to Micro-LED or Mini-LED dimensions, then high resolution and small size are achieved, but light emission uniformity and luminous brightness deteriorate
Solution Approach 1:
The patent introduces a first N-type semiconductor layer with holes filled with scattering particles positioned in the light emission region. This creates local optical property variations within the LED chip structure, where the scattering particles are specifically located to scatter light waves and improve emission uniformity without affecting other regions of the chip.
Solution Approach 2:
The patent modifies the optical parameters of the LED chip by introducing scattering particles with specific refractive indices into the first N-type semiconductor layer. This changes the light propagation characteristics within the chip, enhancing light emission uniformity and efficiency through controlled parameter modification rather than changing the overall chip dimensions.
2Manufacturing precision
If the LED chip size is reduced to Micro-LED or Mini-LED dimensions, then high resolution is achieved, but overall screen brightness and display brightness uniformity deteriorate
Solution Approach 1:
The first N-type semiconductor layer with holes filled with scattering particles is specifically positioned in the light emission region to address brightness uniformity issues. This local modification allows small-sized LEDs to maintain high resolution while improving overall screen brightness and display uniformity through targeted optical property enhancement in the critical light emission area.
3Illumination intensity
If scattering particles are added to the N-type semiconductor layer, then light emission uniformity and efficiency are improved, but device complexity increases
Solution Approach 1:
The patent combines the scattering particle function with the N-type semiconductor layer by forming holes within the first N-type semiconductor layer and filling them with scattering particles. This merging of functions into a single integrated layer reduces overall device complexity compared to adding separate scattering layers or structures, while still achieving improved light emission uniformity and efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances light emission uniformity and efficiency, resulting in improved display effects and increased light emission intensity by 3% to 9% compared to traditional LED chips.
Implementation Method 1
The first N-type semiconductor layer includes an N-type semiconductor substrate defining holes and scattering particles filled in the holes
Data Source
AI summary
A light-emitting diode (LED) chip includes at least one LED. The LED includes an epitaxial structure. The epitaxial structure includes an N-type semiconductor stacked layer, a light-emitting layer, and a P-type semiconductor layer which are stacked sequentially. The N-type semiconductor stacked layer includes a first N-type semiconductor layer, an intrinsic semiconductor layer, and a second N-type semiconductor layer which are stacked sequentially. The first N-type semiconductor layer is disposed on one side of the second N-type semiconductor layer away from the light-emitting layer. The first N-type semiconductor layer includes an N-type semiconductor substrate defining holes and scattering particles filled in the holes.