LED Chip Segmentation for High-PPI Low-Current Displays
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Solution Overview
Problem
Current light-emitting diode (LED) chip manufacturing methods face challenges such as low yield, high cost, and difficulty in producing small-sized LEDs with high pixels per inch due to complex mask processes and inefficient luminance control under low current drive.
Innovation Solution
The design of a light-emitting diode chip with a first conductive type semiconductor layer, a light-emitting layer, at least two second conductive type semiconductor layers, and multiple electrodes allows for the formation of multiple independent light-emitting structures within a single chip, reducing size and increasing efficiency under small current drive, while maintaining a compact overall size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single light-emitting structure is used per chip, then the chip size can be larger, but the pixels per inch is reduced
Solution Approach 1:
The patent divides a single chip into multiple independent light-emitting structures (e.g., multiple quantum well layers with different bandgaps), allowing each structure to function as a separate pixel or sub-pixel. This segmentation enables higher pixels per inch within the same chip area while maintaining manufacturability through standardized chip dimensions.
2Manufacturing precision
If the chip size is reduced to increase pixels per inch, then the manufacturing precision is improved, but the luminous efficiency under small current drive is reduced
Solution Approach 1:
The patent implements local quality by creating different light-emitting structures with specific properties at different locations or layers within the chip. Each quantum well layer is designed with optimized thickness and composition to emit at specific wavelengths, allowing efficient light emission from each localized structure even under small current drive conditions.
3Manufacturing precision
If complex mask processes are used to manufacture small-sized LEDs, then the pixels per inch is improved, but the manufacturing cost and complexity increase
Solution Approach 1:
The patent transitions from planar patterning to vertical layering by stacking multiple quantum well layers with different bandgaps in the thickness direction. This dimensional change allows multiple light-emitting functions to be achieved within a single chip structure, reducing the need for complex lateral mask processes while maintaining high pixels per inch through vertical integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the manufacturing yield and reduces costs by enabling higher pixels per inch and improved luminous efficiency, particularly under low current drive, and simplifies the manufacturing process.
Implementation Method 1
Light-emitting diode (LED) is a semiconductor device that emits light by recombination of electrons and holes
Data Source
AI summary
A light-emitting diode chip, a display substrate and a manufacturing method thereof are disclosed. The light-emitting diode chip includes a first conductive type semiconductor layer, a light-emitting layer, at least two second conductive type semiconductor layers, and at least two first electrodes; the at least two second conductive type semiconductor layers are at a side of the light-emitting layer away from the first conductive type semiconductor layer, the at least two first electrodes are electrically respectively connected with the at least two second conductive type semiconductor layers. Orthographic projections of the at least two second conductive type semiconductor layers on the first conductive type semiconductor layer are spaced apart from each other, and orthographic projections of the at least two first electrodes on the first conductive type semiconductor layer are spaced apart from each other.