LED Chip Side Face Doping for Laser Singulation Stability
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Solution Overview
Problem
Light-emitting diode chip singulation technologies, such as laser separation, often result in low-current weakness due to slag deposition and laser beam reflections, creating an electrical parallel path that can only be noticed at the end of the value chain, leading to unstable electrical performance.
Innovation Solution
The introduction of a doping region or neutralized region at the side faces of the light-emitting diode chip, using a dopant to convert the n-type or p-type doping, effectively shifting the radiation-generating region away from the side faces and eliminating voltage drops, thereby preventing the influence of slag and laser reflections on electrical behavior.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If laser separation is used for singulation, then separation efficiency is improved, but electrical stability deteriorates due to slag deposition and laser reflections creating parallel current paths
Solution Approach 1:
The patent applies preliminary action by forming the doping region at the side face before the singulation process. This pre-formed doping region creates an electrically insulating barrier that prevents slag and laser reflections from creating parallel current paths during subsequent laser separation, thereby maintaining electrical stability while enabling efficient singulation
Solution Approach 2:
The patent applies preliminary anti-action by introducing a doping region that converts the side face material to have the same conductivity type as the adjacent semiconductor layer. This creates an electrical barrier in advance that counteracts the harmful effects of slag deposition and laser reflections before they can create parasitic current paths
2Reliability
If additional insulation layers are applied to prevent low-current weakness, then electrical stability is improved, but device complexity increases
Solution Approach 1:
The patent merges the electrical passivation function with the semiconductor layer itself by forming a doping region within the semiconductor material at the side face. This integration eliminates the need for separate insulation layers, reducing structural complexity while maintaining electrical stability
Solution Approach 2:
The patent applies self-service by enabling the semiconductor layer to provide its own electrical passivation through the doping region. The side face material modifies itself to create an electrically insulating barrier, eliminating the need for external insulation structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces low-current weakness, ensuring stable electrical performance and eliminating the need for additional insulation layers, as the doping or neutralized region provides electrical passivation, enhancing the chip's reliability and operational efficiency.
Implementation Method 1
a doping region, in which a dopant is introduced into a semiconductor material of the light-emitting diode chip
Implementation Method 2
an active region arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer... in which electromagnetic radiation is generated during the operation of the light-emitting diode chip
Data Source
AI summary
The invention relates to a light-emitting diode chip, comprising an n-type semiconductor layer (3), a p-type semiconductor layer (4), an active region (2) between the n-type semiconductor layer (3) and the p-type semiconductor layer (4), a lateral surface (14), which limits the n-type semiconductor layer (3), the p-type semiconductor layer (4) and the active region (2) in a lateral direction, and a doped region (1), in which a dopant is introduced into a semiconductor material of the light-emitting diode chip, and/or comprising a neutralized region (1), wherein the doped region (1) and/or the neutralized region (1) are formed at the lateral surface (14) at least in the region of the active region, and the light-emitting diode chip is intended to emit incoherent electromagnetic radiation during operation.