LED Chip Side Surface Patterns for Light Extraction and Heat Dissipation

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Solution Overview

Problem

Current semiconductor light emitting devices face limitations in external quantum efficiency and heat dissipation due to the smooth surfaces of LED chips, which hinder light extraction and thermal management.

Innovation Solution

The introduction of uneven patterns on the sides of semiconductor layers in LED chips, formed through various structures such as zigzag, semi-circular, or polygonal forms, enhances light extraction efficiency and increases the surface area for improved heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If smooth surfaces are used on LED chips, then manufacturing is easier, but external quantum efficiency deteriorates due to hindered light extraction

Engineering Contradiction:
Improveease of manufactureVSAvoidexternal quantum efficiency
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies curvature by forming uneven patterns (convex and concave regions) on the side surfaces of the LED chip. These curved/uneven structures modify light extraction by creating varying incident angles, thereby improving external quantum efficiency while maintaining manufacturing feasibility through standard semiconductor processing techniques.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Ease of manufacture

If smooth surfaces are used on LED chips, then manufacturing is easier, but heat dissipation deteriorates due to reduced surface area

Engineering Contradiction:
Improveease of manufactureVSAvoidheat dissipation
Core Design Contradiction:
Ease of manufactureVSTemperature

Solution Approach 1:

The uneven patterns with convex and concave regions increase the effective surface area of the LED chip sides. This increased surface area provides enhanced pathways for heat dissipation from the active region, improving thermal management without complicating the manufacturing process.

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Reliability

If uneven patterns are formed on LED chip sides, then external quantum efficiency improves through enhanced light extraction, but device complexity increases

Engineering Contradiction:
Improveexternal quantum efficiencyVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements uneven patterns that can be formed using conventional semiconductor fabrication techniques such as etching or deposition processes. While the surface geometry becomes complex, the manufacturing process remains relatively simple by integrating these patterns into existing production workflows, thus balancing improved light extraction with acceptable device complexity.

Inventive Principle:
Principle #14Spheroidality (Curvature)

4Temperature

If uneven patterns are formed on LED chip sides, then heat dissipation improves through increased surface area, but manufacturing complexity increases

Engineering Contradiction:
Improveheat dissipationVSAvoidmanufacturing complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The uneven patterns are formed using standard semiconductor manufacturing techniques that can create three-dimensional surface features. By utilizing existing etching, deposition, or lithography processes, the patent achieves increased surface area for heat dissipation without requiring fundamentally new or overly complex manufacturing equipment or procedures.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The uneven patterns on the LED chip surfaces enhance external quantum efficiency and heat dissipation efficiency by altering light incident angles and increasing the chip's surface area, respectively.

Implementation Method 1

enhances light extraction efficiency by altering light incident angles

Methodology Applied
Scientific EffectLight extraction: Refraction

Implementation Method 2

improving heat dissipation by increasing the surface area of an LED chip

Methodology Applied
Scientific EffectHeat dissipation: Conduction (thermal)

Data Source

PatentUS8536599B2Semiconductor light emitting device and method of fabricating thereof
Publication Date: 2013.09.17 BOE HC SEMITEK LTD (HENGQIN)
  • US8536599B2 patent drawing
  • US8536599B2 patent drawing
  • US8536599B2 patent drawing

AI summary

A semiconductor light emitting device has a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer. An oxide layer is disposed around the first semiconductor layer and is provided between the substrate and active layer. The first semiconductor layer has an uneven pattern along the side edge.