LED Chip Sidewall Structure for Stable Mounting and Beam Angles

The patent applies preliminary action by forming modified regions in the wafer before the actual cutting process. These modified regions are created through laser irradiation that creates a predetermined pattern of modified and ruptured regions, which then guide the subsequent breaking process to produce chips with uniform side surfaces. This preliminary modification ensures that when the wafer is broken along these pre-formed regions, the resulting chips have the desired uniform geometry for proper mounting.

The patent applies local quality by creating different types of regions at different locations within the wafer. Modified regions are formed through controlled laser irradiation with specific parameters (power, speed, wavelength) to create zones with altered physical properties. These modified regions have different characteristics from the surrounding unmodified areas, allowing the wafer to be selectively broken along predetermined lines while maintaining uniform side surfaces in the resulting chips, thus ensuring stable orientation during handling.

The patent applies asymmetry by creating chips with deliberately asymmetric modified and ruptured region patterns. This asymmetric structure ensures that each chip has a unique, non-rotational symmetric geometry with uniform side surfaces that provide natural alignment features. When chips are picked up and transferred, this asymmetric but uniform structure prevents arbitrary rotation, ensuring that all chips are oriented correctly on the circuit substrate to generate uniform beam angles while still allowing for automated mounting processes.