LED Chip Silicon Walls for Thermal and Optical Control

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Solution Overview

Problem

Conventional LED chips face challenges in achieving a narrow beam of light with high precision and efficient heat dissipation due to high thermal resistance and the need for expensive secondary optics, which are inefficient and costly.

Innovation Solution

The method involves forming silicon walls on the LED chip to control light emission, integrate phosphor and lens materials, and enhance heat dissipation, allowing for the production of LED chips with reduced thermal resistance and simplified optics design.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional LED chips are used with a thick carrier substrate for heat dissipation, then the LED structure is mechanically stable, but the thermal resistance is high and heat dissipation is inefficient

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidthermal resistance
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent extracts and removes the thick carrier substrate (70-350 μm) that causes high thermal resistance, replacing it with a thin adhesive layer (1-10 μm) that bonds the LED chip directly to the heat dissipation structure, thereby reducing thermal resistance while maintaining mechanical stability

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the thickness parameter of the substrate/adhesive layer from 70-350 μm to 1-10 μm, fundamentally altering the thermal resistance characteristics and enabling efficient heat dissipation while maintaining structural integrity

Inventive Principle:
Principle #35Parameter changes

2Illumination intensity

If expensive low profile secondary optics are used to achieve a narrow beam of light, then the beam angle is reduced, but the manufacturing cost increases significantly

Engineering Contradiction:
Improvebeam angle controlVSAvoidmanufacturing cost
Core Design Contradiction:
Illumination intensityVSEase of manufacture

Solution Approach 1:

The patent merges the optical beam control function directly into the LED chip structure by forming refractive index patterns in the semiconductor layers, eliminating the need for separate secondary optics components and thereby reducing manufacturing cost while achieving narrow beam control

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The LED chip structure is designed to perform multiple functions: light emission, heat dissipation, and optical beam shaping, by integrating refractive index patterns directly into the chip layers, making the chip itself a multi-functional component that eliminates the need for additional optical elements

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Manufacturing precision

If phosphor material is applied over the LED chip in a carrier with a dam structure for controlled dispensing, then the phosphor distribution is even and controlled, but the assembly cost increases

Engineering Contradiction:
Improvephosphor distribution controlVSAvoidassembly cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent merges the phosphor containment and distribution control function into the LED chip structure itself by forming recesses and using the thin substrate structure, eliminating the need for separate carrier and dam components, thereby reducing assembly cost while maintaining precise phosphor distribution control

Inventive Principle:
Principle #5Merging (Combining)

4Measurement precision

If secondary optics are placed around the package to collimate light, then the light beam is directed precisely, but the device complexity and cost increase

Engineering Contradiction:
Improvelight beam direction controlVSAvoidoptical component quantity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent merges the light collimation and direction control function directly into the LED chip by forming specific refractive index patterns in the semiconductor layers, eliminating the need for external secondary optics and thereby reducing device complexity while achieving precise beam direction control

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the creation of LED chips that can produce a narrow beam of light with high precision and reduced thermal resistance, eliminating the need for expensive secondary optics and lowering manufacturing costs while achieving efficient light collimation and heat management.

Implementation Method 1

one or more silicon walls are provided on the first surface for directing the light emitted

Methodology Applied
Scientific EffectLight reflection: Reflection

Implementation Method 2

the step of selectively etching the first substrate from the LED structure provides the first surface of the LED structure with a surface texture

Methodology Applied
Scientific EffectLight scattering: Scattering

Implementation Method 3

A second substrate (140), made from a silicon wafer, is bonded to the fabricated GaN structure using a permanent, conductive adhesive (145)

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS10381507B2Light emitting diode chip and a method for the manufacture of a light emitting diode chip
Publication Date: 2019.08.13 PLESSEY SEMICON LTD
  • US10381507B2 patent drawing
  • US10381507B2 patent drawing
  • US10381507B2 patent drawing

AI summary

A method for the manufacture of a light-emitting diode (LED) chip, the method comprising providing a first substrate; forming an LED structure on the first substrate, wherein the LED structure has a first surface adjacent the first substrate and a second surface opposite the first substrate; applying a second substrate on the second surface of the LED structure; and selectively etching the first substrate from the LED structure to form one or more walls extending from the first surface of the LED structure.