LED Chip Wavelength Conversion Layer Placement
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Solution Overview
Problem
Current LED technologies face challenges in achieving desirable illumination characteristics, such as size reduction and performance enhancement, particularly in the design and manufacturing of LED chips with wavelength conversion elements.
Innovation Solution
The implementation of an LED chip design featuring an epitaxial layer with a wavelength conversion element, where the distance between the lumiphore and the epitaxial layer is less than 5 microns, and the use of a transparent bonding layer made of inorganic material, along with texturing and ceramic layers, facilitates construction, size reduction, and performance improvement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the wavelength conversion element is positioned closer to the epitaxial layer, then the illumination intensity and efficiency are improved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent employs a transparent bonding layer with thickness of 5 microns or less to position the wavelength conversion element close to the epitaxial layer. This thin film approach enables close positioning for improved illumination intensity while the standardized bonding layer provides a manageable manufacturing interface that reduces precision challenges.
Solution Approach 2:
The patent specifies controlling the distance parameter between the wavelength conversion element and epitaxial layer to be 5 microns or less. By establishing this specific parameter threshold and using standardized bonding layers with controlled thickness, the patent optimizes illumination characteristics while providing a clear manufacturing target that balances precision requirements.
2Illumination intensity
If a transparent bonding layer is used to attach the wavelength conversion element, then the light transmission is improved, but the manufacturing complexity increases
Solution Approach 1:
The patent uses a transparent bonding layer that is 5 microns or less in thickness to attach the wavelength conversion element to the epitaxial layer. This thin transparent film maintains excellent light transmission properties while the standardized thickness specification simplifies the manufacturing process by providing a clear target for bonding layer deposition.
Solution Approach 2:
The patent employs a composite structure consisting of the epitaxial layer, transparent bonding layer, and wavelength conversion element. This composite approach allows each layer to be optimized independently for its specific function (light emission, light transmission, wavelength conversion) while the overall assembly achieves improved illumination characteristics.
3Productivity
If the LED chip size is reduced, then the productivity and application versatility are improved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent integrates the wavelength conversion element directly onto the epitaxial layer using a thin bonding layer, creating a compact nested structure. This nesting approach eliminates the need for separate mounting structures and reduces the overall LED chip footprint while maintaining functional performance, thereby improving productivity and application versatility.
Solution Approach 2:
The patent merges the wavelength conversion element and epitaxial layer into a single integrated structure with minimal spacing. By combining these functional elements into one compact unit rather than separate components, the patent reduces the overall chip size and simplifies the manufacturing process, improving productivity while managing precision requirements through standardized bonding protocols.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the performance and reduces the size of LED chips, improving their illumination characteristics and manufacturing efficiency by optimizing the placement and material properties of the wavelength conversion elements.
Implementation Method 1
a wavelength conversion element including at least one lumiphore
Implementation Method 2
the first side of the epitaxial layer includes texturing
Data Source
AI summary
Aspects disclosed herein relate to light-emitting diode (LED) chips and manufacturing processes thereof. In certain aspects, an LED chip includes an epitaxial layer with a first side and a second side, a first type contact proximate a second side of the epitaxial layer, and a wavelength conversion element including at least one lumiphore. In certain embodiments, in a flip-chip construction, a distance between the at least one lumiphore and the epitaxial layer is less than 5 microns and/or the first side of the epitaxial layer includes texturing. In certain embodiments, in a vertical stack construction, a transparent bonding layer between the epitaxial layer and the wavelength conversion element includes inorganic material. In certain embodiments, a ceramic layer is bonded to the second side of the epitaxial layer and positioned horizontally adjacent to the first type contact. Such configurations facilitate construction, decrease size, and/or increase performance of the LED chips.