LED Electrode Contact Structure With Partial Insulating Coverage

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Solution Overview

Problem

Existing LED manufacturing processes result in damage and failure due to the formation of insulating films on the outer periphery, and there is a need to improve the contact area between semiconductor layers and electrodes.

Innovation Solution

A method of manufacturing a light emitting element with a first conductive semiconductor layer partially exposed by an insulating film, allowing increased contact area and protected by an auxiliary electrode layer, reducing damage during the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an insulating film is formed on the outer periphery of the LED during manufacturing, then the LED structure is protected and isolated, but the LED may be damaged resulting in failure

Engineering Contradiction:
ImproveLED failure rateVSAvoidDamage during insulating film formation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by creating different surface conditions on the LED in different areas. The outer peripheral surface is treated to be insulating (e.g., oxidized or coated) to prevent damage during insulating film formation, while the lower surface maintains metal conductivity for electrode contact. This localized differentiation allows the LED to withstand the insulating film formation process while preserving electrical functionality.

Inventive Principle:
Principle #3Local quality

2Reliability

If the insulating film covers the entire outer periphery of the LED, then protection is maximized, but the contact area between semiconductor layer and electrode is reduced

Engineering Contradiction:
ImproveLED durabilityVSAvoidContact area between semiconductor layer and electrode
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent creates distinct functional zones: an insulating outer peripheral surface for protection and a conductive lower surface for electrode contact. This local quality differentiation ensures that the insulating film can cover the protected areas while leaving the contact areas exposed and functional.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The LED surface is segmented into functionally distinct regions: the outer peripheral surface that requires insulation for protection, and the lower surface that requires metal conductivity for electrical contact. This segmentation allows each region to be optimized for its specific function without compromising the other.

Inventive Principle:
Principle #1Segmentation

3Stability of the object's composition

If the LED is manufactured with complete insulating coverage, then structural integrity is improved, but manufacturing complexity increases due to damage risks

Engineering Contradiction:
ImproveLED structural integrityVSAvoidManufacturing process complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

By applying insulating treatment only to the outer peripheral surface rather than the entire LED surface, the patent simplifies the manufacturing process. The lower surface retains its metal conductivity and does not require insulating treatment, reducing the complexity of the insulating film formation process while maintaining structural integrity where needed.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20260068771A1Light-emitting diode, manufacturing method therefor, and display device including light-emitting diode
Publication Date: 2026.03.05 SAMSUNG DISPLAY CO LTD
  • US20260068771A1 patent drawing
  • US20260068771A1 patent drawing
  • US20260068771A1 patent drawing

AI summary

A light emitting element includes a first semiconductor layer; an active layer on a surface of the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film to enclose an outer periphery of each of the first semiconductor layer, the active layer, and the second semiconductor layer; and an electrode layer on the second semiconductor layer. The first semiconductor layer includes a first area that is covered by the insulating film, and a second area that is not covered by the insulating film. A perimeter of the outer periphery of the first semiconductor layer in the first area and a perimeter of the outer periphery of the first semiconductor layer in the second area are different from each other.