Semiconductor LED Contact Layout for Low-Current Luminous Efficiency
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The luminous efficiency of semiconductor light emitting devices is reduced when the driving current is lowered, posing a challenge for large screen, low power, and high resolution displays.
Innovation Solution
A semiconductor light emitting device is designed with a first and second conductive semiconductor layer, an active layer, and a metal-semiconductor contact layer, where the contact area between the second conductive semiconductor layer and the contact layer differs from the active layer, allowing for increased current density without inversely relating to chip size, maintaining luminous efficiency and external quantum efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the driving current is lowered to reduce power consumption, then power consumption decreases, but luminous efficiency is reduced
Solution Approach 1:
The patent applies local quality by creating different contact areas at different locations of the semiconductor layer. The first contact area (where metal layer contacts semiconductor layer) is made smaller than the second contact area (active layer area), concentrating the current density in specific regions to maintain high luminous efficiency even at low driving currents, while other regions provide sufficient current supply without excessive power consumption
2Measurement precision
If the chip size is reduced to increase resolution, then resolution increases, but current density decreases
Solution Approach 1:
The patent uses local quality by differentiating contact areas to maintain appropriate current density in small-chip high-resolution displays. The optimized first contact area ensures sufficient current density is achieved in the active region even when the overall chip size is reduced, preventing the inverse relationship between chip size and current density
3Quantity of substance
If the contact area between semiconductor layer and metal layer is increased, then current supply improves, but current density decreases
Solution Approach 1:
The patent resolves this contradiction by implementing local quality through differentiated contact areas. The first contact area is optimized to provide sufficient current supply quantity, while the second contact area (active layer) maintains appropriate current density for efficient light emission. This local differentiation allows both current supply and current density to be optimized simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances luminous efficiency and external quantum efficiency, maintaining linear luminance characteristics even at low gradations, while avoiding the need to reduce chip size, thus simplifying the manufacturing process and reducing production costs.
Implementation Method 1
LED (light emitting diode), which is a well-known semiconductor light-emitting device that converts electric current into light
Implementation Method 2
The MS contact layer may be formed in ohmic contact
Data Source
AI summary
A semiconductor light-emitting device and a display apparatus comprising same are disclosed. The semiconductor light-emitting device according to an embodiment of the present disclosure comprises: a first conductive type semiconductor layer and a second conductive type semiconductor layer; an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a metal-semiconductor (MS) contact layer formed on one surface of the second conductive type semiconductor layer, which is spaced apart from the active layer; and a first metal layer formed on the first conductive type semiconductor layer and a second metal layer formed to cover the MS contact layer, wherein the area over which one surface of the second conductive type semiconductor layer comes into contact with the MS contact layer is different from the area of the active layer.