Planar Current Block Structure for LED Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current light-emitting diodes (LEDs) face decreased light extraction efficiency due to non-uniform current distribution, leading to electrical current crowding and high electric fields, which can cause LED failure.
Innovation Solution
Incorporating a current block region with reduced electrical conductivity in the semiconductor stacked structure, formed using methods like oxygen plasma treatment, N2O plasma treatment, or ion implantation, to ensure uniform current spreading and prevent high electric fields by aligning electrodes with the current block regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a current block region is formed in the semiconductor stacked layer to improve current spreading, then current distribution uniformity is improved, but high electric field concentration occurs at the corners of the current block region causing LED failure
Solution Approach 1:
The current block region is formed with a curved boundary instead of sharp corners. The curvature radius is specifically designed to be between 1-10 micrometers, which eliminates the corner effects that cause high electric field concentration while maintaining the current spreading function. This curved geometry smoothly distributes the electric field lines and prevents field concentration at any single point.
Solution Approach 2:
The invention applies different geometric properties to different parts of the current block region. The central area maintains its current blocking function with appropriate dimensions, while the boundary is specifically designed with curvature to address the electric field concentration problem. This local differentiation of geometric quality resolves the contradiction between current spreading and electric field management.
2Ease of manufacture
If conventional photolithography and etching processes are used to form the current block region, then the structure is simple, but the manufacturing precision and control over electric field distribution are insufficient
Solution Approach 1:
The invention changes the geometric parameter of the current block region from sharp corners to curved boundaries with a specific curvature radius range (1-10 micrometers). This parameter change is achieved through modified etching processes that can control the curvature, thereby improving electric field distribution control while maintaining manufacturing feasibility.
Solution Approach 2:
The curved boundary design is incorporated into the current block region formation process from the beginning, rather than attempting to correct electric field issues after device fabrication. This preliminary geometric optimization ensures proper electric field distribution is built into the device structure during manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively disperses electrical current, preventing high electric field concentrations and enhancing light extraction efficiency while maintaining LED functionality.
Implementation Method 1
forming a current block region in the semiconductor stacked structure by oxygen plasma treatment, N2O plasma treatment, argon plasma treatment, ion implantation, or wet oxidation
Implementation Method 2
forming a current block region in the semiconductor stacked structure by oxygen plasma treatment, N2O plasma treatment, argon plasma treatment, ion implantation, or wet oxidation
Implementation Method 3
forming a current block region in the semiconductor stacked structure by oxygen plasma treatment, N2O plasma treatment, argon plasma treatment, ion implantation, or wet oxidation
Data Source
AI summary
The present disclosure discloses a method of manufacturing a light-emitting device comprising the steps of providing a light-emitting wafer having a semiconductor stacked structure and an alignment mark, sensing the alignment mark, and separating the light-emitting wafer into a plurality of light-emitting diodes and removing the alignment mark accordingly.