LED Current Blocking Layer Nitrogen Vacancies
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Solution Overview
Problem
Conventional light-emitting diodes experience brightness loss due to the high light transmittance of current blocking layers, which absorb or reflect light energy, leading to reduced brightness.
Innovation Solution
A light-emitting diode structure incorporating a current blocking layer with nitrogen vacancies, formed using a sputtering process with argon, nitrous oxide, or oxygen plasma, where the nitrogen vacancies are gradually distributed from the current blocking area to the surface, reducing absorption and enhancing light transmittance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional current blocking layer is used, then current blocking function is achieved, but light transmittance is reduced causing brightness loss
Solution Approach 1:
The patent applies local quality by creating nitrogen vacancies specifically in the region where the current blocking layer contacts the second type semiconductor layer, while maintaining the light-transmissive property in other regions. This localized modification allows the current blocking layer to block current effectively at the contact interface while preserving light transmittance for the overall layer structure.
Solution Approach 2:
The patent changes the physical-chemical parameters of the current blocking layer by introducing nitrogen vacancies, which alter the electrical conductivity and optical properties of the material. The nitrogen vacancies create localized electrical blocking while maintaining optical transparency, thus improving both current blocking function and light transmittance simultaneously.
2Illumination intensity
If light transmittance is increased to reduce brightness loss, then brightness is improved, but current blocking ability may be compromised
Solution Approach 1:
The patent applies local quality by creating nitrogen vacancies specifically in the region where the current blocking layer contacts the second type semiconductor layer, while maintaining the light-transmissive property in other regions. This localized modification allows the current blocking layer to block current effectively at the contact interface while preserving light transmittance for the overall layer structure.
Solution Approach 2:
The patent changes the physical-chemical parameters of the current blocking layer by introducing nitrogen vacancies, which alter the electrical conductivity and optical properties of the material. The nitrogen vacancies create localized electrical blocking while maintaining optical transparency, thus improving both current blocking function and light transmittance simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure increases light transmittance and brightness by minimizing light absorption in the current blocking layer while allowing some current flow, thereby enhancing light-emitting efficiency.
Implementation Method 1
formed using a sputtering process with argon, nitrous oxide, or oxygen plasma
Data Source
AI summary
The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking.