Semiconductor Light Emitting Device Current Density Control
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Solution Overview
Problem
Conventional LED structures face challenges in controlling current density and optimizing luminosity, as increasing current density leads to decreased radiative recombination due to rising temperatures, making it difficult to achieve optimal luminous efficiency without complicating assembly processes.
Innovation Solution
A semiconductor light emitting device with a semiconductor substrate structure and a light emitting diode structure that includes a transparent insulating film and current control electrodes, allowing for controlled current flow through patterning, and using wafer bonding technology to optimize current density and luminosity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If current density is increased to improve luminosity, then luminous output increases, but radiative recombination decreases due to temperature rise
Solution Approach 1:
The invention divides the electrode structure into multiple segments: a lower electrode, an intermediate transparent insulating film with patterned openings, and an upper electrode. This segmentation allows current to flow through multiple discrete paths rather than uniformly across the entire electrode area, enabling better control of current density distribution and preventing excessive temperature rise that would reduce radiative recombination efficiency.
Solution Approach 2:
The transparent insulating film is selectively removed in specific patterned regions to create localized current flow paths. This creates areas of high current density where needed (under the light-emitting regions) while maintaining lower current density in other areas, optimizing the local quality of current distribution to maintain radiative recombination efficiency while achieving high overall luminosity.
2Reliability
If multiple small chips are connected in parallel to distribute current and optimize current density, then optimal current density is achieved, but package size becomes large and assembly processes become complicated
Solution Approach 1:
The invention merges multiple current flow paths into a single integrated chip structure. By incorporating the transparent insulating film with patterned openings in the electrode structure, multiple current paths are created within one chip rather than requiring multiple separate chips connected in parallel. This simplifies the assembly process while maintaining optimal current density distribution.
Solution Approach 2:
The transparent insulating film serves multiple functions simultaneously: it acts as an insulator, a current distribution controller, and a structural element of the electrode. This multi-functionality eliminates the need for separate components to achieve current distribution, reducing device complexity and assembly steps.
3Illumination intensity
If a metallic reflective layer is formed between substrate and active layer to improve luminosity, then light reflection improves, but current control and current density optimization become difficult
Solution Approach 1:
The transparent insulating film acts as an intermediary layer between the lower electrode and the active layer. It provides the necessary electrical insulation while allowing optical transmission, and its patterned openings enable current control. This intermediary structure replaces the need for a metallic reflective layer while simultaneously providing current control functionality.
Solution Approach 2:
The invention changes the electrical parameter (insulation property) of the layer between substrate and active layer from conductive (metallic reflective layer) to insulating (transparent insulating film). This parameter change enables current control while maintaining optical functionality through the transparency of the insulating material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective control of current density and optimization of luminosity, enhancing the semiconductor light emitting device's performance by limiting current flow and improving assembly processes, while maintaining a compact chip size.
Implementation Method 1
bonding the first metal layer and the third metal layer by thermo-compression bonding
Data Source
AI summary
A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided. The semiconductor light emitting device including: a semiconductor substrate structure including a semiconductor substrate, a first metal layer placed on a first surface of the semiconductor substrate, and a second metal layer placed on a second surface of the semiconductor substrate; and a light emitting diode structure including a third metal layer placed on the semiconductor substrate structure, a current control layer placed on the third metal layer and composed of a transparent insulating film and a current control electrode, an epitaxial growth layer placed on the current control layer, and a surface electrode placed on the epitaxial growth layer, wherein the semiconductor substrate structure and the light emitting diode structure are bonded by using the first metal layer and the third metal layer.