LED Current Diffusion Layer Comb Electrode Design
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Solution Overview
Problem
Current light emitting diodes (LEDs) suffer from non-uniform current distribution due to the current crowding effect, leading to decreased illuminating efficiency and non-uniform light output, making it difficult to produce high-quality light.
Innovation Solution
The LED design incorporates a current diffusion layer with a super-lattice stacked structure, including aluminum gallium nitride and gallium nitride layers, and comb-shaped electrodes that penetrate through multiple semiconductor layers, allowing for improved current diffusion and distribution, thereby enhancing illumination efficiency and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional LED structure is used, then manufacturing is simple, but current distribution is non-uniform due to current crowding effect
Solution Approach 1:
The patent introduces a current diffusion layer as an intermediary component between the electrode and the active region. This layer specifically addresses the current crowding effect by diffusing current laterally, improving current distribution uniformity without requiring complete redesign of the entire LED structure.
Solution Approach 2:
The current diffusion layer is segmented into multiple regions with different doping concentrations and thicknesses. This segmentation allows different portions of the layer to perform different functions: some regions focus on current diffusion while others maintain vertical current flow, enabling precise control over current distribution patterns.
2Manufacturing precision
If current diffusion layer with complex structure is added, then current distribution uniformity is improved, but manufacturing complexity increases
Solution Approach 1:
The current diffusion layer utilizes parameter changes in doping concentration and layer thickness to achieve current distribution control. By varying these parameters across different regions of the layer, the patent optimizes current diffusion while maintaining compatibility with existing manufacturing processes for semiconductor devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases the current distribution area in the semiconductor layers, leading to improved illumination efficiency and uniform light output, potentially reducing the number of required comb structures and enhancing light quality.
Implementation Method 1
a current diffusion layer, a third semiconductor layer... The resistance of the current diffusion layer is greater than the resistance of the third semiconductor layer and the resistance of the second semiconductor layer
Data Source
AI summary
A light emitting diode includes a substrate, a first semiconductor layer, a luminous layer, a second semiconductor layer, a current diffusion layer, a third semiconductor layer, a first electrode, a second electrode, and an insulation layer. The first semiconductor layer is formed above the substrate. The luminous layer is formed on the first semiconductor layer, and exposes a portion of the first semiconductor layer. The second semiconductor layer is formed on the luminous layer. The current diffusion layer is formed on the second semiconductor layer. The third semiconductor layer is formed on the current diffusion layer. The first electrode is formed on the first semiconductor layer. The second electrode includes a base portion formed on the surface of the substrate, and plural comb structures extending upward vertically. Each tip of the comb structure is in the third semiconductor layer. The insulation layer exposes the tip of each comb structure.