LED Die Current Loop Design Bypassing Defect Density
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Solution Overview
Problem
Traditional LED dies formed on sapphire substrates face issues with current flow through areas of high defect density, leading to potential leakage and limited light extraction due to the design of electrodes and light emitting structures.
Innovation Solution
The LED die is designed with a plurality of grains featuring a six-sided pyramid structure, where the electrodes and light emitting layers are formed not only on the substrate but also underneath, creating a current loop that avoids the highest defect density area and widens the light extraction area by allowing current flow through the entire light emitting structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If current flows through the top end of the semiconductor to complete the circuit, then the LED die can operate, but current flows through areas with high defect density causing leakage
Solution Approach 1:
The patent transitions from a traditional planar current path to a three-dimensional current loop structure. The current flows laterally through the semiconductor layer from the p-type electrode to the n-type electrode at the substrate interface, utilizing the horizontal dimension to bypass defect-prone vertical regions at the semiconductor top surface.
Solution Approach 2:
The patent inverts the conventional current flow direction by placing the n-type electrode at the substrate interface rather than at the top surface. This inversion allows current to enter through the p-type electrode, travel laterally through the semiconductor body, and exit through the n-type electrode at the base, avoiding high-defect regions.
2Ease of manufacture
If traditional electrode and light emitting structure design is used, then manufacturing is simplified, but light extraction area is limited
Solution Approach 1:
The patent extends the light emitting structure from a two-dimensional top-surface configuration to a three-dimensional structure that utilizes the vertical dimension. The semiconductor layer itself becomes part of the light emitting structure, with light extraction occurring through the lateral surfaces and substrate interface, significantly increasing the effective light extraction area.
Solution Approach 2:
The semiconductor layer serves multiple functions: it provides the active region for light generation, acts as the light emitting structure, and serves as the substrate for electrode placement. This multi-functionality eliminates the need for separate epitaxial layers, simplifying manufacturing while maximizing light extraction through the entire semiconductor volume.
Data Source
AI summary
An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.