LED Structure with Discontinuous Intermediate Layer for High Luminosity

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Solution Overview

Problem

Conventional light-emitting diodes (LEDs) have lower luminosity compared to traditional incandescent lamps, requiring higher currents or more LEDs to achieve sufficient luminosity, which increases energy consumption and occupies more space, thus necessitating improvements in luminance for broader adoption.

Innovation Solution

A light-emitting apparatus comprising multiple light-emitting semiconductor stacks connected by an intermediate layer with a discontinuous quantum dot structure, enhancing current flow and light-emitting efficiency through a space charge region and tunneling effect, while reducing series resistance and operating voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If higher current is provided to LEDs to increase luminosity, then light output is improved, but power consumption increases and suppresses the low power consumption benefit

Engineering Contradiction:
ImproveluminosityVSAvoidpower consumption
Core Design Contradiction:
Illumination intensityVSUse of energy by moving object

Solution Approach 1:

The patent changes the electrical parameters of the LED structure by introducing an intermediate layer with specific conductivity characteristics (10^-6 to 10^3 S/cm) between p-type and n-type semiconductor layers. This parameter change enables improved current distribution and reduced series resistance, allowing higher luminosity at lower power consumption levels.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite semiconductor structure consisting of multiple layers with different material properties: p-type semiconductor layer, intermediate layer with graded conductivity, and n-type semiconductor layer. This composite structure optimizes both light output and electrical efficiency by combining the advantages of different material compositions.

Inventive Principle:
Principle #40Composite materials

2Illumination intensity

If more LEDs are used to increase luminosity, then light output is improved, but occupied area increases and energy consumption increases

Engineering Contradiction:
ImproveluminosityVSAvoidoccupied area
Core Design Contradiction:
Illumination intensityVSArea of stationary object

Solution Approach 1:

The patent merges multiple semiconductor layers into a single integrated LED structure with an intermediate layer that enhances overall performance. This consolidation achieves higher luminosity from a single device rather than requiring multiple separate LEDs, thereby reducing occupied area.

Inventive Principle:
Principle #5Merging (Combining)

3Illumination intensity

If more LEDs are used to increase luminosity, then light output is improved, but energy consumption increases

Engineering Contradiction:
ImproveluminosityVSAvoidenergy consumption
Core Design Contradiction:
Illumination intensityVSUse of energy by stationary object

Solution Approach 1:

The patent optimizes energy consumption by changing the electrical parameters through the intermediate layer structure, which reduces series resistance and improves current efficiency. This enables achieving higher luminosity with lower total energy consumption compared to using multiple conventional LEDs.

Inventive Principle:
Principle #35Parameter changes

4Ease of manufacture

If conventional LED structure is used, then manufacturing is simple, but luminance is insufficient for practical lighting applications

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidluminance
Core Design Contradiction:
Ease of manufactureVSIllumination intensity

Solution Approach 1:

The patent maintains manufacturing simplicity while improving luminance by introducing an intermediate layer with controlled conductivity parameters (10^-6 to 10^3 S/cm). This parameter-based approach allows standard manufacturing processes to be used while achieving superior light output performance.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality improvement by inserting an intermediate layer with specific electrical properties at a particular location within the semiconductor structure. This localized modification enhances overall luminance without requiring complete restructuring of the entire device.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution increases current density and light-emitting efficiency, allowing for higher luminance with lower operating voltage and reduced energy consumption, thereby improving LED performance and promoting their use in daily life applications.

Implementation Method 1

enhancing current flow and light-emitting efficiency through a space charge region

Methodology Applied
Scientific EffectSpace charge region: Electric Field

Implementation Method 2

enhancing current flow and light-emitting efficiency through a space charge region and tunneling effect

Methodology Applied
Scientific EffectTunneling effect:

Implementation Method 3

The light-emitting diodes (LEDs) of the solid-state lighting elements have the characteristics of the low power consumption, low heat generation, long operational life

Methodology Applied
Scientific EffectLight emission: Light Emitting Diode

Data Source

PatentUS9269863B2Light-emitting apparatus
Publication Date: 2016.02.23 ENNOSTAR CORP
  • US9269863B2 patent drawing
  • US9269863B2 patent drawing
  • US9269863B2 patent drawing

AI summary

The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer.