LED with Dual Semiconductor Layers and Electrodes
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Solution Overview
Problem
Existing light-emitting diode (LED) manufacturing processes face challenges in increasing production yield, which affects the economic viability and performance of display devices.
Innovation Solution
The design of a light-emitting diode with a specific semiconductor structure and electrode configuration, including multiple quantum well light-emitting layers and conductive electrodes, is integrated into a display device with a thin film transistor substrate, enhancing electrical connections and adhesion for improved manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If existing LED manufacturing processes are used, then production yield is limited, but increasing production yield requires new structural configurations
Solution Approach 1:
The LED structure is divided into multiple semiconductor layers (first semiconductor layer, second semiconductor layer, third semiconductor layer) with distinct functions. Each layer can be independently optimized and manufactured, allowing parallel processing and higher production yield while maintaining overall device performance
Solution Approach 2:
Multiple light-emitting layers are nested between the semiconductor layers, with each light-emitting layer containing quantum well structures. This nested configuration allows multiple light-emitting regions to be integrated within a single device structure, increasing functional density without proportionally increasing manufacturing complexity
2Reliability
If multiple light-emitting layers are added to increase functionality, then device performance improves, but manufacturing complexity increases
Solution Approach 1:
The device is segmented into functional blocks: semiconductor layers for electrical conduction, light-emitting layers for photon generation, and electrode layers for electrical connection. This segmentation allows each block to be optimized independently, improving overall device performance while managing manufacturing complexity through modular approaches
Solution Approach 2:
Different regions of the device have specialized structures optimized for their specific functions. The semiconductor layers have doping profiles optimized for carrier injection, the light-emitting layers have quantum well structures optimized for radiative recombination, and the electrodes have configurations optimized for electrical connection. This local optimization improves performance without requiring uniform complexity throughout the entire device
3Ease of manufacture
If electrode connections are optimized for better electrical connectivity, then manufacturing efficiency improves, but device structure becomes more complex
Solution Approach 1:
The electrode structures are designed and positioned during the initial manufacturing process, with conductive layers and contacts established before final device assembly. This preliminary configuration of electrical connections simplifies subsequent manufacturing steps and improves overall manufacturing efficiency, even though the electrode structure itself is complex
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the yield of display devices by optimizing the semiconductor structure and electrode connections, leading to enhanced performance and reduced production costs.
Implementation Method 1
The recombination of electron and hole in the light-emitting diode may produce electromagnetic radiation (such as light) through the current at the p-n junction. For example, in the forward bias p-n junction formed by direct band gap materials such as GaAs or GaN, the recombination of electron and hole injected into the depletion region results in electromagnetic radiation.
Data Source
AI summary
A light-emitting diode is provided. The light-emitting diode includes a first semiconductor structure having an upper surface and a lower surface; a second semiconductor layer disposed adjacent to the upper surface; a third semiconductor layer disposed adjacent to the lower surface; two light-emitting layers disposed between the upper surface and the second semiconductor layer and disposed between the lower surface and the third semiconductor layer, respectively; a first electrode disposed over the second semiconductor layer; and a second electrode disposed over the third semiconductor layer.