LED Electrode Structure Optimizing Current Distribution

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Solution Overview

Problem

Current light-emitting devices, such as LEDs, face challenges in enhancing light emitting efficiency, which is crucial for their application in various fields including displays and lighting systems.

Innovation Solution

The design incorporates a semiconductor light-emitting stack with a specific electrode structure that includes a current injected portion, extension portions, and an electrical contact structure, where the ratio of the electrical contact structure to the light emitting area is between 3% to 15%, optimizing current injection and distribution for improved luminous efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the electrical contact structure area is increased to improve current distribution, then luminous efficiency improves, but the ratio of electrical contact structure to light emitting area becomes too large

Engineering Contradiction:
Improveluminous efficiencyVSAvoidelectrical contact structure area ratio
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

The electrode structure is divided into different functional regions: a current injected portion with larger area for current input, extension portions for current distribution, and an electrical contact structure with optimized area ratio (3%-15%) for effective electrical contact. Each region has different area characteristics suited to its specific function, resolving the contradiction between sufficient current distribution and maintaining light emitting area.

Inventive Principle:
Principle #3Local quality

2Device complexity

If the electrode structure is simplified to reduce manufacturing complexity, then device complexity decreases, but current injection and distribution efficiency deteriorates

Engineering Contradiction:
Improveelectrode structure complexityVSAvoidlight emitting efficiency
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The electrode is segmented into distinct functional portions: a current injected portion for current input, extension portions for current distribution across the semiconductor layer, and an electrical contact structure for electrical contact. This segmentation allows each portion to be optimized for its specific function while maintaining overall structural simplicity and manufacturability.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the luminous efficiency of light-emitting devices, achieving efficiencies up to 80 lm/W, surpassing conventional designs, and allowing for better light extraction and distribution.

Implementation Method 1

a semiconductor light-emitting stack having a light emitting area

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking area formed between the current injected portion and the semiconductor light-emitting stack

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS8987776B2Light-emitting device
Publication Date: 2015.03.24 ENNOSTAR CORP
  • US8987776B2 patent drawing
  • US8987776B2 patent drawing
  • US8987776B2 patent drawing

AI summary

A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.