LED Electrode Layout With Leveling Layer for Heat Dissipation
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in maintaining reliability due to high thermal resistance, which affects their heat dissipation performance.
Innovation Solution
The semiconductor light emitting device incorporates a substrate structure with specific regions for electrode extensions and pads, along with an interlayer insulating layer and a leveling electrode layer to reduce level differences between electrode extensions, and is packaged with a heat dissipation lead frame to enhance heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrode layer configurations are used, then device structure is simple, but heat dissipation performance is poor due to high thermal resistance
Solution Approach 1:
The electrode structure is divided into multiple distinct layers: a first electrode layer extending into a first region, a second electrode layer extending into a second region, and a third electrode layer extending into a third region. This segmentation allows each layer to be optimized for its specific function, with the first and second electrode layers providing electrical connections and the third electrode layer providing a heat dissipation path, thereby resolving the contradiction between structural simplicity and heat dissipation performance.
Solution Approach 2:
The electrode layers are extended in different spatial directions and regions: the first electrode layer extends into a first region, the second electrode layer extends into a second region, and the third electrode layer extends into a third region. This dimensional differentiation creates multiple heat dissipation pathways and electrical connection points, improving thermal management without requiring complex three-dimensional structures.
2Ease of operation
If electrode extensions have significant level differences, then manufacturing is simpler, but pad electrode formation and wire bonding become difficult
Solution Approach 1:
A fourth electrode layer is introduced as a leveling electrode that extends over both the first and second regions, creating an equipotential surface. This leveling electrode compensates for the height differences between the first, second, and third electrode layers, providing a flat surface for pad electrode formation. This resolves the contradiction by enabling easy pad formation while accepting the added complexity of the leveling structure.
3Reliability
If thermal resistance is high, then device structure is simpler, but heat dissipation performance deteriorates
Solution Approach 1:
Different electrode layers are assigned different materials optimized for their specific functions: the first and second electrode layers use materials optimized for electrical conductivity and connection to the light emitting structure, while the third electrode layer uses materials optimized for heat dissipation. This local quality differentiation improves heat dissipation performance without requiring a uniform increase in material quantity throughout the entire device.
Data Source
AI summary
A semiconductor light emitting device includes a substrate structure, first and second regions and a main region; a light emitting structure, first and second electrode layers, an interlayer insulating layer, and a pad electrode layer. The light emitting structure is provided on the third region. The first electrode layer is provided between the substrate structure and the light emitting structure, and has a first electrode extension that extends into the first region. The second electrode layer is provided between the first electrode layer and the light emitting structure, and has a second electrode extension that extends into the second region. The interlayer insulating layer is provided between the first and second electrode layers, and has an opening exposing a portion of the first electrode extension. The pad electrode layer is provided on the interlayer insulating layer, and is connected to the portion of the first electrode extension through the opening.