LED Electrode and Conduction Layer Layout for Light Extraction
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Solution Overview
Problem
Conventional light-emitting diodes (LEDs) face a challenge in maintaining light-emitting efficiency due to the need for a substantial portion of the active layer to be removed for electrode formation, which affects the light-emitting efficiency.
Innovation Solution
A semiconductor light-emitting device is designed with a semiconductor stack having a first surface with protrusion and concave portions, a first electrode with a bonding and extending portion, and a transparent conduction layer covering the first surface and between the first electrode and the semiconductor stack, enhancing light reflection and extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a substantial portion of the active layer is removed for electrode formation, then the electrode area is sufficient for subsequent processes, but the light-emitting efficiency drops
Solution Approach 1:
The patent transitions from planar electrode structures to three-dimensional vertically stacked structures. Multiple active layers are stacked in the vertical dimension, allowing electrodes to contact multiple light-emitting regions without requiring large lateral removal of active material. This vertical stacking enables sufficient electrode area for wiring while preserving the light-emitting efficiency of each active layer.
Solution Approach 2:
The patent divides the light-emitting device into multiple discrete active layers stacked vertically, each capable of independent light emission. This segmentation allows selective removal and electrode formation between specific layers without compromising the integrity or efficiency of remaining active layers, thus maintaining overall light-emitting efficiency while providing adequate electrode area.
2Productivity
If multiple active layers are stacked to improve light output, then the light-emitting efficiency increases, but the device complexity increases
Solution Approach 1:
The patent combines multiple active layers into a single vertically integrated stack, sharing common electrode structures and support substrates. This merging approach allows multiple light-emitting functions to be achieved within a compact structure, increasing light output while avoiding the complexity of separate discrete devices. The shared infrastructure reduces overall device complexity despite the increased functionality.
3Reliability
If the electrode area is increased for better electrical connection, then the electrical connection improves, but the shading effect increases and light extraction decreases
Solution Approach 1:
The patent moves electrical connections from lateral (in-plane) configurations to vertical configurations. Electrodes extend vertically between stacked active layers, providing robust electrical connections without occupying lateral space that would shade light extraction paths. This vertical arrangement maintains reliable electrical connectivity while minimizing the shading effect on light extraction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves light-emitting efficiency by reflecting and concentrating light emitted from the active layer, while also reducing the shading effect of electrodes, thereby enhancing the overall performance of the semiconductor light-emitting device.
Implementation Method 1
The solution improves light-emitting efficiency by reflecting and concentrating light emitted from the active layer
Data Source
AI summary
A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.