Light-Emitting Element Electrode Misalignment for Thin Pixels
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Solution Overview
Problem
The challenge lies in forming a super-thin-type light-emitting diode pixel, as the existing light-emitting structures grown on substrates or with metal supports are too thick, making it difficult to achieve a compact, thin design.
Innovation Solution
A light-emitting element design featuring a light-emitting structure with a first and second conductive type semiconductor layer, electrodes, and an insulation layer, where the second electrode is partially overlapping and partially misaligned with the second conductive type semiconductor layer, allowing for a thinner and more precise configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a substrate or metal support is used to grow the light-emitting structure, then the structural stability and growth feasibility are improved, but the overall thickness increases making it difficult to achieve super-thin pixels
Solution Approach 1:
The patent removes the substrate and metal support from the final light-emitting element structure. The light-emitting structure is grown on a substrate initially, but the substrate is removed after growth, and no metal support is used, achieving a substrate-free super-thin structure that eliminates the thickness problem while maintaining structural integrity through the self-supported semiconductor layers
Solution Approach 2:
The substrate is used temporarily during the growth process and then discarded (removed) after the light-emitting structure is formed. This allows the substrate to serve its purpose during manufacturing without contributing to the final product thickness, enabling super-thin pixel formation
2Area of stationary object
If the cross-sectional area of the light-emitting structure is reduced to form small pixels, then the pixel size is reduced, but the thickness remains too large to achieve super-thin pixels
Solution Approach 1:
By removing the substrate and metal support that contribute to excessive thickness, the patent enables the light-emitting structure to maintain a reduced cross-sectional area for small pixel formation while simultaneously achieving super-thin thickness, resolving the contradiction between miniaturization and thinness
3Reliability
If the second electrode completely overlaps the second conductive type semiconductor layer, then the electrical contact is improved, but light leakage increases and processing precision is reduced
Solution Approach 1:
The second electrode is designed with non-uniform distribution: it overlaps the second conductive type semiconductor layer in regions where electrical contact is needed, while deliberately avoiding overlap in regions where light emission occurs. This localized differentiation optimizes both electrical contact reliability and light emission efficiency, preventing light leakage while maintaining proper electrical connection
4Object-generated harmful factors
If the second electrode is misaligned with the second conductive type semiconductor layer, then light leakage is reduced, but electrical contact reliability deteriorates
Solution Approach 1:
The electrode structure implements spatially differentiated functionality: partial overlap regions provide electrical contact with the second conductive type semiconductor layer, while non-overlap regions prevent light leakage. This local quality variation resolves the contradiction by optimizing different functions in different spatial locations
Solution Approach 2:
The second electrode is segmented into multiple functional regions: some portions overlap the semiconductor layer for electrical contact, while other portions are misaligned to prevent light leakage. This segmentation allows simultaneous optimization of electrical contact and light emission characteristics
Data Source
AI summary
Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the light-emitting structure and the second electrode.