LED Electrode Protrusion for Uniform Current Distribution

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Light emitting diodes (LEDs) face reduced current efficiency due to high resistance in the first conductive semiconductor layer, leading to non-uniform current distribution and increased forward voltage, which limits their performance in applications such as displays and lighting.

Innovation Solution

The introduction of a light emitting device structure featuring a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a current blocking region, and a first electrode layer with a protrusion that extends towards the first conductive semiconductor layer, allowing for improved current distribution and reduced resistance across the active layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional LED structure with a first conductive semiconductor layer, active layer, and second conductive semiconductor layer is used, then the device can generate light from the active layer, but the high resistance of the first conductive semiconductor layer causes non-uniform current distribution and increased forward voltage, reducing current efficiency

Engineering Contradiction:
Improvecurrent efficiencyVSAvoidelectrode structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The first electrode layer is divided into multiple electrode patterns (first, second, third electrode patterns) that are spatially separated and distributed across the first conductive semiconductor layer. This segmentation allows current to be injected at multiple locations simultaneously, improving current distribution uniformity and reducing the impact of high resistance in any single region.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different electrode patterns are positioned at specific locations on the first conductive semiconductor layer to create localized current injection zones. The electrode patterns are strategically placed to address regions with higher resistance, ensuring that current is supplied where needed most to achieve uniform distribution across the active layer.

Inventive Principle:
Principle #3Local quality

2Reliability

If the first conductive semiconductor layer has high resistance, then the device structure remains simple, but current concentrates around the electrode layer and adjacent regions, increasing forward voltage and reducing current efficiency

Engineering Contradiction:
Improvecurrent efficiencyVSAvoidforward voltage
Core Design Contradiction:
ReliabilityVSPower

Solution Approach 1:

The electrode layer is segmented into multiple distinct electrode patterns that distribute current injection across different regions of the first conductive semiconductor layer. This prevents current concentration around a single electrode and reduces the overall forward voltage required to drive current through the high-resistance layer.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The electrode patterns extend in multiple directions and cover a broader area on the first conductive semiconductor layer, transitioning from a point-source or line-source current injection to a distributed areal current injection. This dimensional expansion of current injection pathways reduces resistance effects and forward voltage.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If current is concentrated around the electrode layer due to high resistance, then the device structure remains simple, but current efficiency is reduced and heat emission increases

Engineering Contradiction:
Improvecurrent efficiencyVSAvoidheat emission
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The current path is segmented into multiple parallel pathways through the distribution of electrode patterns across the first conductive semiconductor layer. This segmentation disperses the current flow, preventing localized current concentration and the associated heat generation in any single region, thereby reducing overall heat emission.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Electrode patterns are strategically positioned to address local regions where current concentration and heat generation are most problematic. By creating localized current injection zones in high-resistance areas, the invention prevents current crowding and reduces heat emission in critical regions.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances current efficiency and light efficiency by ensuring current flows uniformly across the broad region of the active layer, reducing forward voltage and improving reliability by preventing heat emission and electrostatic discharge.

Implementation Method 1

the light emitting diode having a light emitting structure layer formed by stacking a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, generates light from the active layer, using power that is applied

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS8860055B2Light emitting device
Publication Date: 2014.10.14 SUZHOU LEKIN SEMICON CO LTD
  • US8860055B2 patent drawing
  • US8860055B2 patent drawing
  • US8860055B2 patent drawing

AI summary

A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.