LED Electrode Segmentation for Uniform Current Distribution
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Solution Overview
Problem
Conventional light emitting diodes (LEDs) suffer from a current crowding effect, where the luminous efficiency decreases exponentially with distance from the electrodes, and local heating occurs due to uneven current distribution, necessitating an improvement in electrode arrangement and structure to enhance light efficiency.
Innovation Solution
A method of manufacturing LEDs involving the formation of semiconductor layers with nanostructures, where a mask layer with grooves is used to create nano-shaped n-type and p-type semiconductors, and electrodes are strategically placed in both outer and inner regions to distribute current uniformly, with an insulation layer and reflective layer to prevent shorting and enhance light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If electrodes are concentrated in one region, then device structure is simplified, but current distribution becomes uneven and luminous efficiency decreases
Solution Approach 1:
The electrode structure is segmented into multiple regions: outer regions and inner regions. The inner electrodes are divided into horizontal line regions and vertical line regions that extend toward the center, creating multiple current injection paths throughout the LED structure rather than concentrating current in a single location.
Solution Approach 2:
Different regions of the LED are provided with different electrode configurations. Outer regions have electrodes for current injection, while inner regions have additional electrodes extending toward the center. This local differentiation ensures uniform current distribution across the entire light-emitting area, with each region optimized for its specific function.
2Ease of manufacture
If electrodes are placed in one region, then manufacturing process is simplified, but local heating phenomenon occurs
Solution Approach 1:
The heating problem is addressed by segmenting the electrode structure into outer and inner regions with multiple line segments. This distribution of current paths prevents concentration of thermal energy in one location, thereby reducing local heating while maintaining a manufacturable structure through systematic electrode placement.
3Loss of energy
If nanostructures are added to increase light emitting area, then luminous efficiency improves, but current crowding effect worsens
Solution Approach 1:
The patent applies local quality by providing different electrode configurations in different regions. Outer regions have electrodes for current injection, while inner regions have additional horizontal and vertical line regions extending toward the center. This local differentiation ensures uniform current distribution across the entire light-emitting area, preventing current crowding even as the light-emitting area is expanded through nanostructures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves current distribution, reduces the current crowding effect, and enhances light efficiency by increasing the light emission surface area and maintaining consistent current injection across the LED region, thereby improving luminous efficiency and reducing local heating.
Implementation Method 1
a light emitting diode including a nanostructure... a light emitting diode including a nanostructure has been used to increase the light emitting area
Implementation Method 2
the n-electrode and the p-electrode, which supply electrons and holes, respectively
Implementation Method 3
forming an etched region by etching an outer region of the semiconductor layer and an inner region of the semiconductor layer
Data Source
Figure 1A~2C
Figure 2D~3
Figure 4A~4B
AI summary
A method of manufacturing a light emitting diode is provided. The method includes forming a semiconductor layer on a substrate, forming a mask layer including a plurality of grooves on the semiconductor layer, forming a plurality of nanostructures in the plurality of grooves, respectively, forming an etched region by etching an outer region of the semiconductor layer and an inner region of the semiconductor layer different from the outer region, forming a first electrode on the etched region of the semiconductor layer, forming an insulation layer on the first electrode, and forming a second electrode on the insulation layer and the plurality of nanostructures.