Light Emitting Element Electrode Step Coverage
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Solution Overview
Problem
The challenge is to create a super-thin-type light emitting element with improved deposition quality of a metal layer, as existing light emitting diodes have thick substrates or metal supports that hinder the formation of small, high-performance pixels due to poor step coverage of semiconductor and metal layers.
Innovation Solution
A light emitting element with a specific electrode structure and an electron beam deposition apparatus featuring a variable jig that allows for adjustable substrate inclination, ensuring even metal layer deposition on stepped portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick substrate or metal support is used in conventional light emitting diodes, then structural stability is improved, but the formation of small high-performance pixels is hindered due to poor step coverage of semiconductor and metal layers
Solution Approach 1:
The patent introduces a tilted substrate holder that changes the deposition geometry from vertical to oblique angles. This dimensional change in the deposition approach allows metal layers to be deposited effectively on stepped portions of the substrate, improving step coverage without requiring changes to the substrate thickness or basic structure.
Solution Approach 2:
The substrate holder is designed with adjustable tilt angles, allowing dynamic adjustment of the substrate orientation during the deposition process. This enables optimization of metal layer deposition on stepped portions while maintaining structural stability of the thick substrate or metal support.
2Area of moving object
If the cross-sectional area of light emitting structure is reduced to realize small light emitting diode, then miniaturization is achieved, but the thickness of each light emitting structure becomes too large to form super-thin-type pixel
Solution Approach 1:
By tilting the substrate holder during metal layer deposition, the patent enables effective coating on the vertical sidewalls of the light emitting structure. This allows reduction of the light emitting structure cross-sectional area while maintaining adequate metal layer coverage, facilitating the formation of super-thin-type pixels.
3Device complexity
If conventional substrate holder is used in electron beam deposition apparatus, then device simplicity is maintained, but deposition quality of metal layer on stepped portion is poor
Solution Approach 1:
The substrate holder is designed with adjustable tilt angles, allowing dynamic adjustment of the substrate orientation during the deposition process. This enables optimization of metal layer deposition on stepped portions while maintaining structural stability of the thick substrate or metal support.
Solution Approach 2:
The patent introduces a tilted substrate holder that changes the deposition geometry from vertical to oblique angles. This dimensional change in the deposition approach allows metal layers to be deposited effectively on stepped portions of the substrate, improving step coverage without requiring changes to the substrate thickness or basic structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables improved step coverage and even thickness of the electrode layer, enhancing the performance and miniaturization of light emitting elements, particularly in forming super-thin-type pixels.
Implementation Method 1
a source feeder including a deposition material to be evaporated by a thermal electron supplied from the thermal electron emitter
Implementation Method 2
a thermal electron emitter
Data Source
Figure 1~3A
Figure 3B~5
Figure 6~7
AI summary
A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3 = 1:0.9∼1.1:1