Light Emitting Element Electrode With Through Holes
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Solution Overview
Problem
Current light emitting elements face challenges in improving electric characteristics between the optical semiconductor layer and the electrode, leading to high contact resistance and reduced light emitting efficiency due to limited oxygen penetration at the interface.
Innovation Solution
A light emitting element design featuring a second electrode layer with a conductive reflecting layer and a conductive layer having through holes that allow oxygen penetration, forming ohmic contact and enhancing the interfacial area, thereby reducing contact resistance and improving heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional electrode layer is used without through holes, then the structure is simple and continuous, but oxygen penetration is limited and contact resistance is high
Solution Approach 1:
The electrode layer is designed with through holes penetrating from the upper surface to the lower surface, creating a porous structure that allows oxygen to reach the semiconductor layer interface. This porous configuration reduces contact resistance by enabling oxygen penetration while maintaining electrical conductivity through the metal material filling the holes.
Solution Approach 2:
The electrode structure transitions from a two-dimensional continuous layer to a three-dimensional structure with vertical through holes. This dimensional change allows oxygen to penetrate through the thickness direction of the electrode, creating multiple contact points with the semiconductor layer and significantly reducing contact resistance.
2Temperature
If the electrode layer is made thicker to improve heat dissipation, then heat dissipation capacity increases, but oxygen penetration becomes more difficult
Solution Approach 1:
The electrode layer is segmented into multiple regions separated by through holes. This segmentation creates vertical channels that allow oxygen to penetrate through the entire thickness of the electrode layer, solving the oxygen penetration problem while the remaining metal material provides heat dissipation pathways.
Solution Approach 2:
The electrode layer is designed with through holes creating a porous structure that enables oxygen to penetrate through the thickness direction. This porous configuration allows oxygen access to the semiconductor interface while the metal material provides thermal conduction pathways for heat dissipation.
3Reliability
If the electrode layer is made thinner to improve oxygen penetration, then oxygen access improves, but heat dissipation capacity is reduced
Solution Approach 1:
The electrode structure utilizes the thickness direction dimension by creating vertical through holes. This allows oxygen to penetrate through the electrode thickness while the horizontal extent of the electrode layer maintains heat dissipation capacity, solving both oxygen access and heat dissipation requirements simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces contact resistance and enhances light emitting efficiency by increasing oxygen exposure at the interface and improving heat dissipation, stabilizing the temperature of the semiconductor layer and increasing the surface area for better heat dissipation.
Implementation Method 1
a conductive layer, that are positioned on the conductive reflecting layer, having a plurality of through holes that penetrate therethrough in a thickness direction thereof
Implementation Method 2
oxidizing, in the stacked body, an interfacial area with the first metal layer by heating the stacked body at a temperature that is higher than the melting point of an oxide of the first metal layer and is lower than a melting point of the first metal layer and the melting point of the second metal layer
Implementation Method 3
the second electrode layer includes a conductive reflecting layer positioned on the second semiconductor layer
Data Source
AI summary
A light emitting element includes an optical semiconductor layer (2) obtained by sequentially laminating a first semiconductor layer (2a), a light emitting layer (2b), and a second semiconductor layer (2c); a first electrode layer (3) that is electrically connected to the first semiconductor layer (2a); and a second electrode layer (7) that is electrically connected to the second semiconductor layer (2c). The second electrode layer (7) includes a conductive reflecting layer (4) positioned on the second semiconductor layer (2c), and a conductive layer (5) having a plurality of through holes (6) that are positioned on the conductive reflecting layer (4) and penetrate therethrough in a thickness direction thereof.