LED Light-Emitting Structure With Reduced Emission Area
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Solution Overview
Problem
Current LED display technologies face challenges in achieving high luminous efficiency and reducing power consumption, as the luminous efficiency of LEDs is far from reaching the high-efficiency light-emitting region, leading to increased power consumption and suboptimal display quality.
Innovation Solution
A light-emitting device design that includes a base substrate with a light-emitting structure featuring a first semiconductor layer, a light-emitting layer, a second semiconductor layer with oppositely charged doping ions, a barrier structure with an opening exposing the second semiconductor layer, and a landing electrode, which reduces the effective light-emitting region by controlling the size and area of the semiconductor layers and openings, thereby increasing current density and improving luminous efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the light-emitting area is reduced by controlling the size of semiconductor layers and openings, then luminous efficiency increases, but device complexity increases
Solution Approach 1:
The device is segmented into multiple functional layers including first and second semiconductor layers, light-emitting layer, barrier structure with opening, and landing electrode. This segmentation allows precise control of the light-emitting region while maintaining manufacturing feasibility through standardized layer-by-layer fabrication processes.
Solution Approach 2:
The barrier structure with opening and the specifically dimensioned semiconductor layers create local variations in the device structure. The opening in the barrier structure selectively exposes the second semiconductor layer only in the desired light-emitting region, while other areas have different structural characteristics. This local quality control enables precise luminous efficiency improvement without requiring complete structural redesign.
2Loss of energy
If the light-emitting area is reduced to increase current density, then luminous efficiency improves, but manufacturing precision requirements increase
Solution Approach 1:
The barrier structure with opening is formed before the landing electrode, establishing the light-emitting region boundaries in advance. This preliminary action defines the precise area where current will be concentrated, allowing subsequent manufacturing steps to focus on maintaining rather than creating the critical dimensions. The opening size and position are predetermined by the barrier structure fabrication.
Solution Approach 2:
The invention controls the light-emitting area by adjusting parameters such as the opening size in the barrier structure, the thickness and area of the second semiconductor layer, and the relative positioning of layers. By optimizing these parameters within reasonable ranges, the patent achieves high luminous efficiency without requiring extreme manufacturing precision that would be difficult to maintain consistently.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reduced light-emitting area enhances luminous efficiency by up to 20% while maintaining excellent display quality, resulting in lower power consumption and improved power usage efficiency.
Implementation Method 1
a barrier structure located on the side, facing away from the light-emitting layer, of the second semiconductor layer, wherein the barrier structure is provided with an opening for exposing the second semiconductor layer, an orthographic projection of the opening on the base substrate is located in an orthographic projection of the light-emitting layer on the base substrate, and an area of the opening is smaller than that of the light-emitting layer
Implementation Method 2
a second semiconductor layer located on the side, facing away from the first semiconductor layer, of the light-emitting layer, wherein doping ions of the second semiconductor layer and the first semiconductor layer are oppositely charged
Implementation Method 3
Light-emitting diode (LED) display refers to a technology that traditional LEDs are arrayed and miniaturized
Implementation Method 4
a landing electrode located on the side, facing away from the second semiconductor layer, of the barrier structure, wherein the landing electrode is in contact with the second semiconductor layer through the opening
Data Source
AI summary
A light-emitting device, a light-emitting substrate, and a method for manufacturing the light-emitting device. The light-emitting device includes at least one light-emitting structure. The light-emitting structure includes: a first semiconductor layer; a light-emitting layer; a second semiconductor layer, doping ions of the second semiconductor layer and a first semiconductor layer being oppositely charged; a barrier structure provided with an opening for exposing the second semiconductor layer, the orthographic projection of the opening on the base substrate being located in the orthographic projection of the light-emitting layer on the base substrate, and the area of the opening being smaller than that of the light-emitting layer; and a landing electrode located on the side of the barrier structure facing away from the second semiconductor layer, the landing electrode being in contact with the second semiconductor layer by means of the opening.