LED Epitaxial Structure With Doped Intermediate Layer for Current Spreading
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing light emitting diode (LED) epitaxial wafer structure with PN electrodes on the same side experiences current congestion, leading to high forward voltage, heat generation, short life, and high energy consumption due to poor expansibility.
Innovation Solution
A light emitting diode epitaxial structure is designed with an optimized intermediate layer doped with n-type impurities, featuring multiple expansion layers and a multi-quantum well layer, which improves current distribution and reduces forward voltage by adjusting doping concentrations and layer thicknesses, enhancing luminous efficiency and crystal quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the intermediate layer doping concentration is increased to improve current distribution, then current congestion is alleviated, but crystal quality deteriorates
Solution Approach 1:
The patent applies parameter changes by precisely controlling the doping concentration of the intermediate layer to be ≤4×10^18 atoms/cm³, which is a specific quantitative parameter optimization. This parameter setting achieves the optimal balance between improving current distribution uniformity and maintaining crystal quality, resolving the technical contradiction through quantitative parameter control.
Solution Approach 2:
The patent applies local quality by creating different doping concentration zones within the intermediate layer structure. The intermediate layer includes multiple sub-layers with different doping concentrations (first sub-layer: ≤1×10^18 atoms/cm³, second sub-layer: ≤4×10^18 atoms/cm³), allowing each region to serve different functions - lower doping regions maintain crystal quality while higher doping regions improve current distribution.
2Use of energy by moving object
If the forward voltage is reduced to lower energy consumption, then energy efficiency is improved, but luminous output may be affected
Solution Approach 1:
The patent applies parameter changes by optimizing multiple parameters simultaneously: intermediate layer doping concentration (≤4×10^18 atoms/cm³), multi-quantum well layer thickness (50-200 nm), and electron blocking layer doping concentration (1×10^19 to 1×10^21 atoms/cm³). These coordinated parameter optimizations achieve reduced forward voltage while maintaining or improving luminous output through enhanced carrier confinement and reduced non-radiative recombination.
Solution Approach 2:
The patent applies composite materials by creating a multi-layer composite structure including intermediate layer, multi-quantum well layer, electron blocking layer, and contact layers. Each layer is composed of specific material compositions (GaN, AlGaN, InGaN) with tailored properties, and their composite arrangement achieves synergistic effects that reduce forward voltage while maintaining high luminous output.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves uniform current distribution, reduces forward voltage, improves light efficiency, and ensures crystal quality, while also reducing defects and enhancing electron transport performance.
Implementation Method 1
the intermediate layer is doped with a n-type impurity, and an average doping concentration of the n-type impurity is ≤4×10^18 atoms/cm3
Implementation Method 2
Light Emitting Diode (LED for short) is a kind of light emitting device, which can efficiently convert electric energy into light energy by combining electrons and holes
Data Source
AI summary
A light emitting diode epitaxial structure and a light emitting diode are provided. The light emitting diode epitaxial structure includes a substrate, and an N-type semiconductor layer, an intermediate layer, a multi-quantum well layer and a P-type semiconductor layer which are sequentially arranged on the substrate, wherein the intermediate layer is doped with a n-type impurity, and a doping concentration of the n-type impurity is ≤4×1018 atoms/cm3. In a specific implementation of the present disclosure, the n-type impurity is Si, and the intermediate layer is a GaN layer doped with Si.