LED Epitaxial Structure With Thin P-Type Layer for Stress Reduction
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Solution Overview
Problem
The existing epitaxial structure of GaAs-based near-infrared light emitting diodes suffers from significant internal stress and structural defects due to lattice mismatch, leading to reduced product yield and shortened service life.
Innovation Solution
The epitaxial structure is optimized by reducing the overall thickness of the P-type semiconductor layer and controlling the thickness of each functional sublayer to minimize internal stress and improve bonding performance, while maintaining sufficient carrier supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the thickness of the P-type semiconductor layer is increased to provide sufficient carrier holes, then the carrier supply is improved, but the internal stress and structural defects increase due to lattice mismatch
Solution Approach 1:
The P-type semiconductor layer is divided into multiple functional sublayers (P-type cladding layer, P-type window layer, and P-type distributed Bragg reflector) with each layer having optimized thickness. This segmentation allows the total thickness to be reduced while maintaining carrier supply through the combined contribution of all sublayers, thereby reducing internal stress and structural defects.
Solution Approach 2:
The thickness parameters of each sublayer are optimized within specific ranges: the P-type cladding layer thickness is 0.1-0.5 μm, the P-type window layer thickness is 0.05-0.3 μm, and the P-type DBR thickness is 0.5-1.0 μm. By changing these parameters, the patent achieves sufficient carrier supply with reduced total thickness, thus reducing internal stress and lattice mismatch defects.
2Quantity of substance
If the thickness of the epitaxial structure is increased to improve carrier supply, then the electro-optical performance is improved, but the stress accumulation during growth increases
Solution Approach 1:
The epitaxial structure is segmented into multiple functional regions with optimized thicknesses. The P-type semiconductor layer total thickness is controlled at 0.2-1.0 μm by dividing it into thinner sublayers, which reduces stress accumulation during growth while maintaining sufficient carrier supply through the combined thickness of all P-type sublayers.
Solution Approach 2:
The patent optimizes the thickness parameters of each layer within specific ranges to reduce stress accumulation. The P-type cladding layer is 0.1-0.5 μm, P-type window layer is 0.05-0.3 μm, and P-type DBR is 0.5-1.0 μm. These parameter changes enable sufficient carrier supply with reduced total thickness, thereby reducing stress accumulation during epitaxial growth.
3Quantity of substance
If the thickness of each functional sublayer is increased to improve carrier supply, then the electro-optical conversion efficiency is improved, but the bonding performance between sublayers deteriorates
Solution Approach 1:
The P-type semiconductor layer is segmented into multiple thin sublayers (cladding layer 0.1-0.5 μm, window layer 0.05-0.3 μm, DBR 0.5-1.0 μm) instead of using a single thick layer. This segmentation improves bonding performance between sublayers due to better interface contact, while the combined thickness of 0.2-1.0 μm ensures sufficient carrier supply for electro-optical conversion.
Solution Approach 2:
The patent optimizes the thickness parameters of each sublayer within specific ranges to improve bonding performance. The thinner sublayers (P-type cladding layer 0.1-0.5 μm, P-type window layer 0.05-0.3 μm) provide better interface contact and bonding, while the combined thickness maintains sufficient carrier supply for electro-optical conversion efficiency.
Data Source
AI summary
An epitaxial structure, a light emitting diode (LED), and a method of manufacturing the epitaxial structure are provided. The epitaxial structure includes a P-type semiconductor layer, a light emitting region, and a N-type semiconductor layer stacked in sequence. A thickness of the P-type semiconductor layer 110 is less than or equal to 1.0 μm. By limiting the overall thickness of the P-type semiconductor layer, the internal stress and the internal stress distribution of each sublayer are optimized. Stress accumulation is effectively reduced, and structural defects of the light emitting diode caused by stress release during packaging and use are reduced or eliminated. The light emitting brightness of the light emitting diode is thereby improved, and the service life of the light emitting diode is prolonged.