Integrated ESD Diode in LED Chip Recess
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Solution Overview
Problem
Radiation-emitting semiconductor chips, such as light-emitting diodes, are vulnerable to damage from electrostatic discharge, which can be mitigated by an additional diode but increases space requirements and manufacturing costs, and reduces optical power.
Innovation Solution
A radiation-emitting semiconductor chip with a protective diode integrated into the chip, where the diode is electrically connected between the first and second semiconductor layers, allowing charge carriers to flow away and reducing the risk of damage from electrostatic discharge without the need for an external diode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an additional protective diode is connected in parallel to the semiconductor chip, then the sensitivity to electrostatic discharge is reduced, but the required space and manufacturing costs increase
Solution Approach 1:
The protective diode is merged with the semiconductor chip structure by integrating it into the recess of the semiconductor body. The first terminal layer extends from the first semiconductor layer into the recess and connects to the second semiconductor layer via the protective diode, combining the protective function with the existing chip geometry rather than adding a separate external component.
Solution Approach 2:
The protective diode is nested within the recess of the semiconductor body. The first terminal layer is positioned within the recess and electrically connects the first and second semiconductor layers through the protective diode, effectively hiding the protective component inside the existing structure to minimize external space requirements.
2Reliability
If an additional protective diode is connected in parallel to the semiconductor chip, then the sensitivity to electrostatic discharge is reduced, but the manufacturing costs increase
Solution Approach 1:
The protective diode manufacturing process is merged with the semiconductor chip fabrication process. The first terminal layer is formed in the recess during the same manufacturing sequence as the semiconductor layers, eliminating the need for separate assembly steps and reducing overall manufacturing complexity and cost.
3Reliability
If an additional protective diode is connected in parallel to the semiconductor chip, then the sensitivity to electrostatic discharge is reduced, but the usable optical power is reduced due to radiation absorption
Solution Approach 1:
The protective diode is nested within the recess of the semiconductor body, positioning it in a location where it does not interfere with the optical path. This internal placement allows the protective function to be provided without the diode absorbing radiation that would otherwise reach the external environment, preserving usable optical power.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated protective diode effectively reduces the risk of damage from electrostatic discharge, maintaining the chip's optoelectronic properties and eliminating the need for an external diode, thus minimizing space and cost increases.
Implementation Method 1
Electrostatic discharge (ESD) can damage or even destroy radiation-emitting semiconductor chips, such as light-emitting diodes (LEDs). The protection diode can function as an ESD (Electrostatic Discharge) diode, protecting the semiconductor chip from damage caused by electrostatic discharge.
Implementation Method 2
Such damage can be prevented by connecting an additional diode in parallel to the semiconductor chip, with the forward direction of the diode and the forward direction of the radiation-emitting semiconductor chip being antiparallel to each other.
Implementation Method 3
radiation-emitting semiconductor chips, such as light-emitting diodes (LEDs). An operating voltage applied between the first and second contacts causes charge carriers to be injected into the active region from different sides. These injected charge carriers can recombine within the active region, emitting radiation.
Implementation Method 4
These injected charge carriers can recombine within the active region, emitting radiation.
Data Source
Figure 1A~1B
Figure 2
Figure 3A~3B
AI summary
A radiation-emitting semiconductor chip (1) is described, comprising a substrate (5) and a semiconductor body (2) with a sequence of semiconductor layers. The semiconductor layer sequence includes an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region (20) is located between the first semiconductor layer (21) and the second semiconductor layer (22). The first semiconductor layer (21) is located on the side of the active region (20) facing away from the substrate (5). The semiconductor body (2) has at least one recess (25) extending through the active region (20). The first semiconductor layer (21) is electrically connected to a first terminal layer (31), the terminal layer (31) extending within the recess from the first semiconductor layer (21) towards the substrate (5).The first connection layer (31) is electrically connected to the second semiconductor layer (22) via a protection diode (4). Furthermore, a method for manufacturing a radiation-emitting semiconductor chip is described.