LED Structure with Etch Stopping Layer for Minimized Emission Area
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Solution Overview
Problem
The challenge in manufacturing light emitting diodes (LEDs) with minimized light emission areas is the susceptibility to damage during the manufacturing process, particularly due to alignment errors during etching steps, which can expose sensitive areas to etching agents, leading to reduced performance.
Innovation Solution
The introduction of an etch stopping layer formed of a suitable conductive material around the electrical contact helps protect the emission area from damage and allows for precise alignment, enabling the creation of LEDs with minimized light emission areas while accommodating potential alignment errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the emission area is minimized to the minimum feature size, then the LED can operate as a point source with improved display resolution, but alignment errors during etching can expose sensitive areas to etching agents causing damage
Solution Approach 1:
The conductive body is formed around the electrical contact before the etching step that defines the emission area. This preliminary formation of the conductive body creates a protective structure that prevents etching agents from damaging the III-nitride material during subsequent processing steps, allowing the emission area to be minimized without compromising reliability
Solution Approach 2:
The conductive body acts as an intermediary protective layer between the etching agents and the sensitive III-nitride material. It serves as a barrier that stops etching agents from reaching and damaging the emission area, enabling precise alignment while maintaining LED performance
2Area of moving object
If the emission area is minimized, then higher packing density and display resolution are achieved, but the manufacturing process requires additional precision especially during etching steps
Solution Approach 1:
The conductive body is formed in advance around the electrical contact before the critical emission area definition step. This preliminary structure serves as a reference and protective element that tolerates alignment variations, reducing the stringency of alignment precision requirements during subsequent etching steps
Solution Approach 2:
The formation of the conductive body changes the structural parameters of the device, creating a more robust configuration that is less sensitive to alignment variations. The conductive body's geometry and position provide a buffer that accommodates manufacturing tolerances
3Area of moving object
If a patterned mask is applied during photolithography to define the emission area, then precise area control is achieved, but misalignment can inadvertently expose III-nitride areas to etching agents
Solution Approach 1:
The conductive body serves as an intermediary protective barrier between the III-nitride material and etching agents. Even if the patterned mask misaligns and exposes III-nitride areas, the conductive body prevents etching agents from reaching and damaging these exposed areas
Solution Approach 2:
The conductive body is formed beforehand to cushion and protect against the harmful effects of potential mask misalignment. It provides a safety margin that compensates for alignment errors, preventing etching agents from damaging the III-nitride material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively minimizes light emission areas, enhancing the precision and reliability of LED manufacturing, particularly for III-nitride based LEDs, and allows for the production of LEDs that can operate as point sources of collimated light, improving their performance and durability.
Implementation Method 1
a light emission layer between the first semiconductor layer and the second semiconductor layer... configured to receive an electrical signal that causes the light emission layer to generate light
Data Source
AI summary
Described herein are light emitting apparatuses with minimized light emission areas and methods for fabricating such apparatuses. In certain embodiments, the emission area corresponds to an area of an electrical contact and is minimized by minimizing the area of the electrical contact. The electrical contact is configured to receive an electrical signal that causes a light emission layer to generate light. The light emission layer is between a first semiconductor layer and a second semiconductor layer, with the electrical contact being formed on the second semiconductor layer. To protect the second semiconductor layer from damage during an etching process, a conductive body is formed around the electrical contact, where the conductive body is a non-ohmic contact to the second semiconductor layer. The conductive body acts as an etch stop against unintended etching of the second semiconductor layer as a result of an alignment error during the etching process.