Integrated LED and FET on III-Nitride Substrate
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Solution Overview
Problem
Semiconductor light emitting diodes (LEDs) experience reduced light emitting efficiency and shortened lifetime due to overheating at high temperatures, leading to increased electricity wastage and manufacturing costs for heat dissipation in conventional light emitting devices.
Innovation Solution
An integrated light emitting diode (LED) and semiconductor field effect transistor (FET) are formed on the same growth substrate, where the FET controls the current passing through the LED to prevent overheating, using a p-type III-nitride base layer, n-type channel and source/drain layers, and a Schottky diode to stabilize current and reduce heat-related issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional electronic components are incorporated to control LED current and prevent overheating, then LED reliability and efficiency are improved, but device complexity increases
Solution Approach 1:
The patent merges the LED and FET into a single integrated device formed on the same growth substrate. The FET is constructed using the same III-nitride semiconductor layers as the LED, with the channel layer serving dual purposes. This integration eliminates the need for separate control components while maintaining the ability to regulate LED current and prevent overheating, thus improving reliability without increasing device complexity.
2Ease of manufacture
If a traditional FET formation process with silicon ion implantation is used, then FET functionality is achieved, but manufacturing cost increases and LED reliability is reduced
Solution Approach 1:
The invention enables the FET to be formed using the existing III-nitride semiconductor layers that constitute the LED structure itself. The channel semiconductor layer serves as the FET channel, and the source and drain regions are formed by doping existing layers. This self-service approach eliminates the need for additional silicon ion implantation processes, reducing manufacturing cost while avoiding damage to the LED structure, thereby maintaining high reliability.
3Reliability
If the LED operates at high temperature, then light emitting efficiency decreases and lifetime is shortened, but additional radiating components increase manufacturing cost
Solution Approach 1:
The integrated FET provides real-time feedback control of the LED current based on temperature conditions. As the LED temperature increases, the FET automatically adjusts the current flowing through the LED to prevent excessive heating. This feedback mechanism inherently manages thermal effects without requiring external radiating components, extending LED lifetime while avoiding increased device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively suppresses temperature-related degradation of LEDs, reducing manufacturing costs and extending their lifespan by integrating a current stabilizing unit within the light emitting device, while also enabling operation under high power and voltage conditions.
Implementation Method 1
a gate electrode formed a Schottky contact with the channel semiconductor layer
Implementation Method 2
a source electrode and a drain electrode respectively formed ohmic contacts with the source semiconductor layer and the drain semiconductor layer
Implementation Method 3
Semiconductor light emitting diodes (LEDs) have many advantages
Data Source
AI summary
A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.