Semiconductor light emitting device and light emitting device assembly including the same
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Solution Overview
Problem
Existing semiconductor light emitting devices struggle to effectively implement gradation, leading to design limitations and potential degradation due to current concentration issues.
Innovation Solution
A semiconductor light emitting device design that adjusts the amount of light emission through structures such as cone-shaped light emitting structures, varying separation wall configurations, and electrode metal layer reflectivity to achieve gradation without significant changes in electrode metal layer positions, thereby controlling light emission efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional semiconductor light emitting device structures are used, then manufacturing is simpler, but gradation implementation is ineffective
Solution Approach 1:
The patent applies local quality by varying the light emitting structure configuration, separation wall positions, and electrode metal layer reflectivity in different regions of the device. This creates spatially differentiated light emission characteristics that enable effective gradation implementation without requiring complete structural redesign throughout the entire device.
Solution Approach 2:
The patent introduces dimensional variation by adjusting separation wall positions and light emitting structure geometries across different spatial dimensions. This multi-dimensional approach allows gradation to be achieved through structural variations rather than simply increasing overall device complexity.
2Manufacturing precision
If electrode metal layer positions are significantly changed to achieve gradation, then gradation control is improved, but design limitations increase
Solution Approach 1:
The patent employs parameter changes by modifying the reflectivity of electrode metal layers and the geometric parameters of light emitting structures rather than significantly displacing electrode metal layer positions. This approach achieves gradation control through parameter optimization while maintaining design flexibility and reducing structural constraints.
3Reliability
If conventional light emitting structures are used, then device structure is simpler, but current concentration issues arise leading to degradation
Solution Approach 1:
The patent addresses current concentration by implementing local quality variations in the light emitting structure configuration and separation wall positioning. These localized structural modifications distribute current more evenly across the active region, preventing concentration-induced degradation while adding only minimal structural complexity.
4Illumination intensity
If light emission amount is increased for better visibility, then illumination intensity is improved, but current concentration and degradation risk increase
Solution Approach 1:
The patent optimizes the balance between illumination intensity and reliability by adjusting parameters such as light emitting structure geometry, separation wall dimensions, and electrode metal layer reflectivity. These parameter optimizations enable enhanced light emission while simultaneously distributing current more effectively to prevent concentration-related degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design allows for effective gradation implementation while minimizing design limitations and reducing current concentration, enhancing reliability and natural gradation effects.
Implementation Method 1
a first electrode metal layer on a lower surface of the first semiconductor layer, the first electrode metal layer including a reflection structure
Data Source
AI summary
Provided is a semiconductor light emitting device including a base layer, a light emitting structure including a first semiconductor layer having a first conductivity, an active layer, and a second semiconductor layer having a second conductivity different from the first conductivity, a wavelength converting layer on the light emitting structure, a separation wall disposed adjacent to side surfaces of the wavelength converting layer, a first electrode metal layer on a lower surface of the first semiconductor layer, the first electrode metal layer including a reflection structure, and a second electrode metal layer electrically connected to the second semiconductor layer via through holes penetrating the first electrode metal layer, the first semiconductor layer, and the active layer, and exposing the second semiconductor layer, wherein the semiconductor light emitting device is configured to implement gradation in a first direction based on adjusting at least one of the light emitting structure on an upper surface of the second semiconductor layer, the reflection structure, the separation wall, and a structure included in the light emitting structure.