LED Heterogeneous Protrusion Structures for Light Extraction
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Solution Overview
Problem
Conventional light emitting diodes (LEDs), particularly nitride semiconductor LEDs, face low external quantum efficiency due to optical losses from total reflection at interfaces with different refractive indices, and surface processing methods to enhance light extraction are limited by potential defects and increased contact resistance.
Innovation Solution
A light emitting diode with a heterogeneous material structure featuring protrusions formed from materials with different refractive indices on the substrate or semiconductor layers, improving light extraction efficiency by refracting and scattering photons, and a method involving etch mask materials like chrome, silicon dioxide, and silver to pattern these protrusions during semiconductor growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If surface processing methods (etching or coarse processing) are used to enhance light extraction, then light extraction efficiency is improved, but defects are induced in the active layer and contact resistance increases
Solution Approach 1:
The patent forms protrusions of heterogeneous materials (such as metal particles or oxide materials) on the substrate or semiconductor layers before completing the semiconductor layer formation. This preliminary action creates the light scattering structures in advance, allowing light extraction enhancement without subsequent surface etching that would cause defects and increase contact resistance.
Solution Approach 2:
The patent introduces heterogeneous material protrusions as intermediary structures between the substrate and the semiconductor layers. These protrusions serve as light scattering centers that improve light extraction efficiency without directly contacting or damaging the active layer, thereby avoiding the defects and contact resistance issues associated with direct surface processing.
2Ease of manufacture
If conventional homogeneous material structure is used, then manufacturing process is simple, but light extraction efficiency is low due to total reflection at interfaces
Solution Approach 1:
The patent applies local quality by forming protrusions of heterogeneous materials at specific locations (on the substrate or within semiconductor layers) rather than uniformly throughout the structure. This localized approach maintains manufacturing simplicity while creating regions with different refractive indices to reduce total reflection and improve light extraction.
Solution Approach 2:
The patent employs composite materials by combining the base substrate or semiconductor layers with protrusions of heterogeneous materials (such as metal particles, oxide materials, or other dielectric materials). This composite structure creates refractive index variations that reduce total internal reflection while maintaining compatibility with existing manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances light extraction efficiency by increasing the surface area and improving the refracting and scattering of photons, reducing defects and contact resistance, and simplifying the growth process for nitride films, thereby enhancing the brightness and stability of the LED.
Implementation Method 1
a protrusion formed of heterogeneous materials having different refractive indexes is formed on at least one of the substrate and the semiconductor layers
Implementation Method 2
improving light extraction efficiency by refracting and scattering photons
Data Source
AI summary
An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.


